IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 200
V
GS
= - 10 V
8.9
2.1
3.9
Single
S
FEATURES
• Dynamic dV/dt Rating
3.0
• Repetitive Avalanche Rated
• Surface Mount (IRFR9210/SiHFR9210)
• Straight Lead (IRFU9210/SiHFU9210)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DPAK
(TO-252)
IPAK
(TO-251)
DESCRIPTION
G
D
P-Channel MOSFET
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRFR9210PbF
SiHFR9210-E3
IRFR9210
SiHFR9210
DPAK (TO-252)
IRFR9210TRPbF
a
SiHFR9210T-E3
a
IRFR9210TR
a
SiHFR9210T
a
DPAK (TO-252)
-
-
IRFR9210TRL
a
SiHFR9210TL
a
IPAK (TO-251)
IRFU9210PbF
SiHFU9210-E3
IRFU9210
SiHFU9210
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
- 200
± 20
- 1.9
- 1.2
- 7.6
0.20
0.020
300
- 1.9
2.5
25
2.5
- 5.0
- 55 to + 150
260
d
UNIT
V
A
Pulsed Drain
I
DM
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
E
AS
Single Pulse Avalanche Energy
b
a
Repetitive Avalanche Current
I
AR
a
Repetitive Avalanche Energy
E
AR
Maximum Power Dissipation
T
C
= 25 °C
P
D
e
Maximum Power Dissipation (PCB Mount)
T
A
= 25 °C
dV/dt
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 50 V, starting T
J
= 25 °C, L = 124 mH, R
G
= 25
Ω,
I
AS
= - 1.9 A (see fig. 12).
c. I
SD
≤
- 1.9 A, dI/dt
≤
70 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
W/°C
mJ
A
mJ
W
V/ns
°C
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IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJA
R
thJC
MIN.
-
-
-
TYP.
-
-
-
MAX.
110
50
5.0
°C/W
UNIT
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= - 250 µA
Reference to 25 °C, I
D
= - 1 mA
V
DS
= V
GS
, I
D
= - 250 µA
V
GS
= ± 20 V
V
DS
= - 200 V, V
GS
= 0 V
V
DS
= - 160 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= - 10 V
I
D
= - 1.1 A
b
- 200
-
- 2.0
-
-
-
-
0.98
-
- 0.23
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
3.0
-
V
V/°C
V
nA
µA
Ω
S
V
DS
= - 50 V, I
D
= - 1.1 A
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
-
-
-
-
170
54
16
-
-
-
8.0
12
11
13
4.5
7.5
-
-
-
8.9
2.1
3.9
-
-
-
-
-
nH
-
ns
nC
pF
V
GS
= - 10 V
I
D
= - 1.3 A, V
DS
= - 160 V,
see fig. 6 and 13
b
-
-
-
V
DD
= - 100 V, I
D
= - 2.3 A,
R
G
= 24
Ω,
R
D
= 41
Ω,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
G
-
S
-
-
-
-
-
-
-
-
110
0.56
- 1.9
A
- 7.6
- 5.8
220
1.1
V
ns
µC
G
S
T
J
= 25 °C, I
S
= - 1.9 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= - 2.3 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
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IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
R
D
V
DS
V
GS
R
G
D.U.T.
+
-
- 10
V
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
V
DD
Fig. 10a - Switching Time Test Circuit
t
d(on)
V
GS
10
%
t
r
t
d(off)
t
f
90
%
V
DS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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