SIHFU9214-E3 datasheet, PDF - EEWORLD Datasheet

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SIHFU9214-E3: Description2.7 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA; CategoryDiscrete semiconductor The transistor; File Size249KB，11 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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SIHFU9214-E3 Overview

2.7 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA

SIHFU9214-E3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Vishay
Parts packaging code	TO-251
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	100 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (Abs) (ID)	2.7 A
Maximum drain current (ID)	2.7 A
Maximum drain-source on-resistance	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251
JESD-30 code	R-PSIP-T3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	50 W
Maximum pulsed drain current (IDM)	11 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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IRFR9214, IRFU9214, SiHFR9214, SiHFU9214

www.vishay.com

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

(V)

DS(on)

()

(Max.) (nC)

(nC)

Configuration

- 250

= - 10 V

3.1

6.8

Single

DPAK

(TO-252)

FEATURES

• P-Channel

3.0

• Surface Mount (IRFR9214, SiHFR9214)

• Straight Lead (IRFU9214, SiHFU9214)

• Advanced Process Technology

• Fast Switching

• Fully Avalanche Rated

• Material categorization: For definitions of compliance

please see

www.vishay.com/doc?99912

IPAK

(TO-251)

DESCRIPTION

D S

P-Channel MOSFET

Third generation power MOSFETs from Vishay utilize

advanced processing techniques to achieve low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation.

DPAK (TO-252)

SiHFR9214-GE3

IRFR9214PbF

SiHFR9214-E3

DPAK (TO-252)

SiHFR9214TRL-GE3

IRFR9214TRLPbF

SiHFR9214TL-E3

DPAK (TO-252)

SiHFR9214TR-GE3

IRFR9214TRPbF

SiHFR9214T-E3

IPAK (TO-251)

SiHFU9214-GE3

IRFU9214PbF

SiHFU9214-E3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche

Energy

= 25 °C

dV/dt

, T

stg

for 10 s

Temperature)

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

= 25 °C, L = 27 mH, R

= 25

,

= - 2.7 A (see fig. 12).

c. I



- 2.7 A, dI/dt



600 A/μs, V



, T



150 °C.

d. 1.6 mm from case.

S13-0166-Rev. D, 04-Feb-13

Document Number: 91282

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

at - 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

- 250

± 20

- 2.7

- 1.7

- 11

0.40

100

- 2.7

5.0

- 5.0

- 55 to + 150

260

W/°C

V/ns

°C

UNIT

SIHFU9214-E3 Related Products

	SIHFU9214-E3	SIHFR9214	SIHFR9214-E3	SIHFR9214T	SIHFR9214T-E3	SIHFR9214TL	SIHFR9214TL-E3	SIHFU9214
Description	2.7 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	2.7 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	2.7 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	2.7 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	2.7 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	2.7 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	2.7 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA	2.7 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
Is it lead-free?	Lead free	Contains lead	Lead free	Contains lead	Lead free	Contains lead	Lead free	Contains lead
Is it Rohs certified?	conform to	incompatible	conform to	incompatible	conform to	incompatible	conform to	incompatible
Maker	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay
Parts packaging code	TO-251	TO-252	TO-252	TO-252	TO-252	TO-252	TO-252	TO-251
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3
Contacts	3	3	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	100 mJ	100 mJ	100 mJ	100 mJ	100 mJ	100 mJ	100 mJ	100 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V	250 V	250 V	250 V	250 V	250 V	250 V	250 V
Maximum drain current (Abs) (ID)	2.7 A	2.7 A	2.7 A	2.7 A	2.7 A	2.7 A	2.7 A	2.7 A
Maximum drain current (ID)	2.7 A	2.7 A	2.7 A	2.7 A	2.7 A	2.7 A	2.7 A	2.7 A
Maximum drain-source on-resistance	3 Ω	3 Ω	3 Ω	3 Ω	3 Ω	3 Ω	3 Ω	3 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251	TO-252	TO-252	TO-252	TO-252	TO-252	TO-252	TO-251
JESD-30 code	R-PSIP-T3	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3
JESD-609 code	e3	e0	e3	e0	e3	e0	e3	e0
Number of components	1	1	1	1	1	1	1	1
Number of terminals	3	2	2	2	2	2	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	240	260	240	260	240	260	240
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	50 W	50 W	50 W	50 W	50 W	50 W	50 W	50 W
Maximum pulsed drain current (IDM)	11 A	11 A	11 A	11 A	11 A	11 A	11 A	11 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	YES	YES	YES	YES	YES	NO
Terminal surface	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	30	40	30	40	30	40	30
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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