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SIHFR9214T

Description
2.7 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
CategoryDiscrete semiconductor    The transistor   
File Size249KB,11 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

SIHFR9214T Overview

2.7 A, 250 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA

SIHFR9214T Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerVishay
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)100 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (Abs) (ID)2.7 A
Maximum drain current (ID)2.7 A
Maximum drain-source on-resistance3 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)11 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
- 250
V
GS
= - 10 V
14
3.1
6.8
Single
S
DPAK
(TO-252)
D
D
FEATURES
• P-Channel
3.0
• Surface Mount (IRFR9214, SiHFR9214)
• Straight Lead (IRFU9214, SiHFU9214)
• Advanced Process Technology
• Fast Switching
• Fully Avalanche Rated
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
IPAK
(TO-251)
DESCRIPTION
G
G
S
G
D S
D
P-Channel MOSFET
Third generation power MOSFETs from Vishay utilize
advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
SiHFR9214-GE3
IRFR9214PbF
SiHFR9214-E3
DPAK (TO-252)
SiHFR9214TRL-GE3
IRFR9214TRLPbF
a
SiHFR9214TL-E3
a
DPAK (TO-252)
SiHFR9214TR-GE3
IRFR9214TRPbF
a
SiHFR9214T-E3
a
IPAK (TO-251)
SiHFU9214-GE3
IRFU9214PbF
SiHFU9214-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche
Energy
b
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
Temperature)
d
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 27 mH, R
g
= 25
,
I
AS
= - 2.7 A (see fig. 12).
c. I
SD
- 2.7 A, dI/dt
600 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
S13-0166-Rev. D, 04-Feb-13
Document Number: 91282
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V
GS
at - 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
- 250
± 20
- 2.7
- 1.7
- 11
0.40
100
- 2.7
5.0
50
- 5.0
- 55 to + 150
260
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V

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Is it lead-free? Contains lead Contains lead Lead free Lead free Contains lead Lead free Contains lead Lead free
Is it Rohs certified? incompatible incompatible conform to conform to incompatible conform to incompatible conform to
Maker Vishay Vishay Vishay Vishay Vishay Vishay Vishay Vishay
Parts packaging code TO-252 TO-252 TO-252 TO-252 TO-252 TO-252 TO-251 TO-251
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 100 mJ 100 mJ 100 mJ 100 mJ 100 mJ 100 mJ 100 mJ 100 mJ
Shell connection DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 250 V 250 V 250 V 250 V 250 V 250 V 250 V 250 V
Maximum drain current (Abs) (ID) 2.7 A 2.7 A 2.7 A 2.7 A 2.7 A 2.7 A 2.7 A 2.7 A
Maximum drain current (ID) 2.7 A 2.7 A 2.7 A 2.7 A 2.7 A 2.7 A 2.7 A 2.7 A
Maximum drain-source on-resistance 3 Ω 3 Ω 3 Ω 3 Ω 3 Ω 3 Ω 3 Ω 3 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-252 TO-252 TO-252 TO-252 TO-252 TO-252 TO-251 TO-251
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSIP-T3 R-PSIP-T3
JESD-609 code e0 e0 e3 e3 e0 e3 e0 e3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) 240 240 260 260 240 260 240 260
Polarity/channel type P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 50 W 50 W 50 W 50 W 50 W 50 W 50 W 50 W
Maximum pulsed drain current (IDM) 11 A 11 A 11 A 11 A 11 A 11 A 11 A 11 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 30 30 40 40 30 40 30 40
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
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