Silicon Controlled Rectifier, 275mA I(T), 100V V(DRM), TO18-3
| Parameter Name | Attribute value |
| package instruction | , |
| Reach Compliance Code | compli |
| Nominal circuit commutation break time | 3.2 µs |
| Maximum DC gate trigger current | 0.05 mA |
| Maximum DC gate trigger voltage | 0.5 V |
| Maximum holding current | 1 mA |
| Maximum leakage current | 0.02 mA |
| On-state non-repetitive peak current | 1 A |
| Maximum on-state current | 275 A |
| Maximum operating temperature | 155 °C |
| Off-state repetitive peak voltage | 100 V |
| surface mount | NO |
| Trigger device type | SCR |
| Base Number Matches | 1 |
| 2N887A | 2N889A | 2N888A | |
|---|---|---|---|
| Description | Silicon Controlled Rectifier, 275mA I(T), 100V V(DRM), TO18-3 | Silicon Controlled Rectifier, 275mA I(T), 200V V(DRM) | Silicon Controlled Rectifier, 275mA I(T), 150V V(DRM) |
| Reach Compliance Code | compli | compli | compli |
| Nominal circuit commutation break time | 3.2 µs | 3.2 µs | 3.2 µs |
| Maximum DC gate trigger current | 0.05 mA | 0.05 mA | 0.05 mA |
| Maximum DC gate trigger voltage | 0.5 V | 0.5 V | 0.5 V |
| Maximum holding current | 1 mA | 1 mA | 1 mA |
| Maximum leakage current | 0.02 mA | 0.02 mA | 0.02 mA |
| On-state non-repetitive peak current | 1 A | 1 A | 1 A |
| Maximum on-state current | 275 A | 275 A | 275 A |
| Maximum operating temperature | 155 °C | 155 °C | 155 °C |
| Off-state repetitive peak voltage | 100 V | 200 V | 150 V |
| surface mount | NO | NO | NO |
| Trigger device type | SCR | SCR | SCR |
| Base Number Matches | 1 | 1 | 1 |
| Maximum on-state voltage | - | 1.5 V | 1.5 V |