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2N888A

Description
Silicon Controlled Rectifier, 275mA I(T), 150V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size47KB,1 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
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2N888A Overview

Silicon Controlled Rectifier, 275mA I(T), 150V V(DRM)

2N888A Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Nominal circuit commutation break time3.2 µs
Maximum DC gate trigger current0.05 mA
Maximum DC gate trigger voltage0.5 V
Maximum holding current1 mA
Maximum leakage current0.02 mA
On-state non-repetitive peak current1 A
Maximum on-state voltage1.5 V
Maximum on-state current275 A
Maximum operating temperature155 °C
Off-state repetitive peak voltage150 V
surface mountNO
Trigger device typeSCR
Base Number Matches1

2N888A Related Products

2N888A 2N889A 2N887A
Description Silicon Controlled Rectifier, 275mA I(T), 150V V(DRM) Silicon Controlled Rectifier, 275mA I(T), 200V V(DRM) Silicon Controlled Rectifier, 275mA I(T), 100V V(DRM), TO18-3
Reach Compliance Code compli compli compli
Nominal circuit commutation break time 3.2 µs 3.2 µs 3.2 µs
Maximum DC gate trigger current 0.05 mA 0.05 mA 0.05 mA
Maximum DC gate trigger voltage 0.5 V 0.5 V 0.5 V
Maximum holding current 1 mA 1 mA 1 mA
Maximum leakage current 0.02 mA 0.02 mA 0.02 mA
On-state non-repetitive peak current 1 A 1 A 1 A
Maximum on-state current 275 A 275 A 275 A
Maximum operating temperature 155 °C 155 °C 155 °C
Off-state repetitive peak voltage 150 V 200 V 100 V
surface mount NO NO NO
Trigger device type SCR SCR SCR
Base Number Matches 1 1 1
Maximum on-state voltage 1.5 V 1.5 V -

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