EEWORLDEEWORLDEEWORLD

Part Number

Search

SPD6555SMSTXV

Description
6 A, 1000 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size73KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SPD6555SMSTXV Overview

6 A, 1000 V, SILICON, RECTIFIER DIODE

SPD6555SMSTXV Parametric

Parameter NameAttribute value
package instructionE-LELF-R2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeE-LELF-R2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum output current6 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time5 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
SPD6557 Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
SPD65
___
___ ___
Screening
2/
__ = Not Screened
TX = TX Level
TXV = TXV
S = S Level
Package Type
___ = Axial
SMS = Surface Mount Square Tab
Family/Voltage
54 = 800 V
55 = 1000 V
56 = 1200 V
57 = 1300 V
6 AMPS
1300 VOLTS
5
μsec
STANDARD RECOVERY
RECTIFIER
FEATURES:
Standard Recovery: 5
μsec
maximum
PIV up to 1500 Volts
Low Reverse Leakage Current
Hermetically Sealed
Single Chip Construction
High Voltage Replacement for 1N5553 &1N5554
Low Thermal Resistance
Available with 0.040” diameter leads
2/
TX, TXV, and Space Level Screening Available
Fast Recovery Versions Available.
Contact Factory.
For higher voltages-See SSDI p/n SDR6W
MAXIMUM RATINGS
Peak Repetitive Reverse Voltage and
DC Blocking Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, T
A
=25
o
C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, Superimposed on I
O
, allow junction to
reach equilibrium between pulses, T
A
=25
o
C)
Operating and Storage Temperature
Maximum Thermal Resistance
Junction to Lead, L = 0.125” (Axial Lead)
Junction to End Tab (Surface Mount
1/
For Ordering Information, Price, Operating Curves, and Availability- Contact Factory.
2/
Screening Based on MIL-PRF-19500. Screening Flow Available on Request.
Symbol
SPD6557
SPD6556
SPD6555
SPD6554
V
RRM
V
RWM
V
R
I
O
I
FSM
T
OP
& T
stg
R
θJL
R
θJE
Axial
Value
1300
1200
1000
800
6
150
-65 to +175
8
4
Units
Volts
Amps
Amps
o
C
o
C/W
Surface Mount
Square Tab
(SMS)
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0086E
DOC

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1661  2859  1889  973  2529  34  58  39  20  51 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号