5962-01-127-9572 datasheet, PDF

5962-01-127-9572: DescriptionIC,SYNC SRAM,256X4,CMOS,DIP,18PIN,CERAMIC; Categorystorage storage; File Size607KB，9 Pages; ManufacturerIntersil ( Renesas ); Websitehttp://www.intersil.com/cda/home/

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5962-01-127-9572 Overview

IC,SYNC SRAM,256X4,CMOS,DIP,18PIN,CERAMIC

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Reach Compliance Code	not_compliant
ECCN code	3A001.A.2.C
Maximum access time	300 ns
JESD-30 code	R-XDIP-T18
memory density	1024 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of terminals	18
word count	256 words
character code	256
Operating mode	SYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	256X4
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP18,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum standby current	0.00001 A
Minimum standby current	2 V
Maximum slew rate	0.006 mA
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

	5962-01-127-9572	HM1-6561-2	HM1-6561B-2
Description	IC,SYNC SRAM,256X4,CMOS,DIP,18PIN,CERAMIC	HM1-6561-2	HM1-6561B-2
Is it Rohs certified?	incompatible	incompatible	incompatible
Reach Compliance Code	not_compliant	not_compliant	not_compliant
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	300 ns	300 ns	220 ns
JESD-30 code	R-XDIP-T18	R-XDIP-T18	R-XDIP-T18
memory density	1024 bit	1024 bit	1024 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	4	4	4
Number of terminals	18	18	18
word count	256 words	256 words	256 words
character code	256	256	256
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C
organize	256X4	256X4	256X4
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	CERAMIC	CERAMIC
encapsulated code	DIP	DIP	DIP
Encapsulate equivalent code	DIP18,.3	DIP18,.3	DIP18,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.00001 A	0.00001 A	0.00001 A
Minimum standby current	2 V	2 V	2 V
Maximum slew rate	0.006 mA	0.006 mA	0.007 mA
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL
JESD-609 code	-	e0	e0
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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