SST39VF800A datasheet, PDF - EEWORLD Datasheet

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SST39VF800A: DescriptionMbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash; File Size4MB，37 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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SST39VF800A Overview

Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

User Manual

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2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

A Microchip Technology Company

SST39LF200A / SST39LF400A / SST39LF800A

SST39VF200A / SST39VF400A / SST39VF800A

Data Sheet

The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K

x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with

SST proprietary, high-performance CMOS SuperFlash technology. The split-gate

cell design and thick oxide tunneling injector attain better reliability and manufac-

turability compared with alternate approaches. The SST39LF200A/400A/800A

write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/

800A write (Program or Erase) with a 2.7-3.6V power supply. These devices con-

form to JEDEC standard pinouts for x16 memories.

Features:

• Organized as 128K x16 / 256K x16 / 512K x16

• Single Voltage Read and Write Operations

– 3.0-3.6V for SST39LF200A/400A/800A

– 2.7-3.6V for SST39VF200A/400A/800A

• Fast Erase and Word-Program

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 µs (typical)

– Chip Rewrite Time:

2 seconds (typical) for SST39LF/VF200A

4 seconds (typical) for SST39LF/VF400A

8 seconds (typical) for SST39LF/VF800A

• Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

• Low Power Consumption

(typical values at 14 MHz)

– Active Current: 9 mA (typical)

– Standby Current: 3 µA (typical)

• Automatic Write Timing

– Internal V

Generation

• End-of-Write Detection

– Toggle Bit

– Data# Polling

• Sector-Erase Capability

– Uniform 2 KWord sectors

• CMOS I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pinouts and command sets

• Block-Erase Capability

– Uniform 32 KWord blocks

• Fast Read Access Time

– 55 ns for SST39LF200A/400A/800A

– 70 ns for SST39VF200A/400A/800A

• Packages Available

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (6mm x 8mm)

– 48-ball WFBGA (4mm x 6mm)

– 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit

• Latched Address and Data

• All non-Pb (lead-free) devices are RoHS compliant

www.microchip.com

DS25001A

03/11

2 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash

A Microchip Technology Company

SST39LF200A / SST39LF400A / SST39LF800A

SST39VF200A / SST39VF400A / SST39VF800A

Data Sheet

Product Description

The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 /

512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance

CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better

reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A

write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/800A write (Program

or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16

memories.

Featuring high-performance Word-Program, the SST39LF200A/400A/800A and SST39VF200A/400A/

800A devices provide a typical Word-Program time of 14 µsec. The devices use Toggle Bit or Data#

Polling to detect the completion of the Program or Erase operation. To protect against inadvertent

write, they have on-chip hardware and software data protection schemes. Designed, manufactured,

and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical

endurance of 100,000 cycles. Data retention is rated at greater than 100 years.

The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are suited for applications that

require convenient and economical updating of program, configuration, or data memory. For all system

applications, they significantly improve performance and reliability, while lowering power consumption.

They inherently use less energy during Erase and Program than alternative flash technologies. When

programming a flash device, the total energy consumed is a function of the applied voltage, current,

and time of application. Since for any given voltage range, the SuperFlash technology uses less cur-

rent to program and has a shorter erase time, the total energy consumed during any Erase or Program

operation is less than alternative flash technologies. These devices also improve flexibility while lower-

ing the cost for program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Program times, independent of the number of

Erase/Program cycles that have occurred. Therefore the system software or hardware does not have

to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-

gram times increase with accumulated Erase/Program cycles.

To meet surface mount requirements, the SST39LF200A/400A/800A and SST39VF200A/400A/800A

are offered in 48-lead TSOP packages and 48-ball TFBGA packages as well as Micro-Packages. See

Figures 2, 3, and 4 for pin assignments.

DS25001A

03/11

SST39VF800A Related Products

	SST39VF800A	SST39LF400A	SST39LF800A	SST39VF400A	SST39VF200A
Description	Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash	Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash	Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash	Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash	Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash

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