2N/PN/SST4117A Series
Vishay Siliconix
N-Channel JFETs
2N4117A
2N4118A
2N4119A
PRODUCT SUMMARY
Part Number
4117
4118
4119
PN4117A SST4117
PN4118A SST4118
PN4119A SST4119
V
GS(off)
(V)
−0.6
to
−1.8
−1
to
−3
−2
to
−6
V
(BR)GSS
Min (V)
−40
−
40
−40
g
fs
Min (mS)
70
80
100
I
DSS
Min (mA)
30
80
200
FEATURES
D
D
D
D
Ultra-Low Leakage: 0.2 pA
Very Low Current/Voltage Operation
Ultrahigh Input Impedance
Low Noise
BENEFITS
D
Insignificant Signal Loss/Error Voltage
with High-Impedance Source
D
Low Power Consumption (Battery)
D
Maximum Signal Output, Low Noise
D
High Sensitivity to Low-Level Signals
APPLICATIONS
D
High-Impedance Transducer
Amplifiers
D
Smoke Detector Input
D
Infrared Detector Amplifier
D
Precision Test Equipment
DESCRIPTION
The 2N/PN/SST4117A series of n-channel JFETs provide
ultra-high input impedance. These devices are specified with
a 1-pA limit and typically operate at 0.2 pA. This makes them
perfect choices for use as high-impedance sensitive front-end
amplifiers.
The hermetically sealed TO-206AF package allows full
military processing per MIL-S-19500 (see Military
Information). The TO-226A (TO-92) plastic package provides
a low-cost option. The TO-236 (SOT-23) package provides
surface-mount capability. Both the PN and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
TO-206AF
(TO-72)
S
1
4
S
C
D
TO-226AA
(TO-92)
TO-236
(SOT-23)
1
D
2
S
2
1
3
G
2
D
Top View
2N4117A
2N4118A
2N4119A
3
G
G
3
Top View
PN4117A
PN4118A
PN4119A
Top View
SST4117 (T7)*
SST4118 (T8)*
SST4119 (T9)*
*Marking Code for TO-236
For applications information see AN105.
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
1
2N/PN/SST4117A Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−40V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . .
−65
to 175_C
(PN, SST Prefix) . . . . . . . . . . . . .
−55
to 150_C
Lead Temperature (
1
/
16
” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipation (case 25_C) :
(2N Prefix)
a
. . . . . . . . . . . . . . . . . . . . . . 300 mW
(PN, SST Prefix)
b
. . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2 mW/_C above 25_C
b. Derate 2.8 mW/_C above 25_C
Operating Junction Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . .
−55
to 175_C
(PN, SST Prefix) . . . . . . . . . . . . .
−55
to 150_C
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
4117
4118
4119
Parameter
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Symbol
Test Conditions
Typ
a
Min
Max
Min
Max
Min
Max
Unit
V
(BR)GSS
V
GS(off)
I
DSS
I
G
=
−1
mA
, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 nA
V
DS
= 10 V, V
GS
= 0 V
V
GS
=
−20
V
V
DS
= 0 V
V
GS
=
−20
V
V
DS
= 0 V
T
A
= 150_C
V
GS
=
−10
V
V
DS
= 0 V
V
GS
=
−10
V
V
DS
= 0 V
T
A
= 100_C
2N
−70
−40
−0.6
30
−1.8
90
−1
−2.5
−1
−10
−2.5
−
40
−1
80
−3
240
−1
−2.5
−1
−10
−2.5
−40
−2
200
−6
600
−1
−2.5
−1
−10
−2.5
V
mA
pA
nA
−0.2
−0.4
PN
SST
PN/SST
−0.2
−0.2
−0.03
−0.2
0.2
0.7
Gate R
G t Reverse Current
C
t
I
GSS
pA
nA
Gate Operating Current
b
Drain Cutoff Current
b
Gate-Source Forward Voltage
b
I
G
I
D(off)
V
GS(F)
V
DG
= 15 V, I
D
= 30
mA
V
DS
= 10 V, V
GS
=
−8
V
I
G
= 1 mA , V
DS
= 0 V
pA
V
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
b
g
fs
g
os
C
iiss
C
rss
e
n
V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
2N/PN
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
SST
2N/PN
SST
V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
1.2
1.2
0.3
0.3
15
nV⁄
√Hz
NT
1.5
1.5
1.5
70
210
3
3
80
250
5
3
100
330
10
3
pF
mS
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. This parameter not registered with JEDEC.
www.vishay.com
2
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
I
DSS
@ V
DS
= 10 V, V
GS
= 0 V
g
fs
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
1000
I
DSS
−
Saturation Drain Current (µA)
300
g
fs
−
Forward Transconductance (µS)
1 nA
Gate Leakage Current
V
GS(off)
=
−2.5
V
100 mA
800
240
100 pA
I
G
−
Gate Leakage
T
A
= 125_C
10 mA
I
GSS
@ 125_C
100 mA
10 mA
600
g
fs
400
I
DSS
200
180
10 pA
120
60
1 pA
T
A
= 25_C
0.1 pA
0
6
I
GSS
@ 25_C
0
0
−1
−2
−3
−4
V
GS(off)
−
Gate-Source Cutoff Voltage (V)
−5
0
12
18
24
V
DG
−
Drain-Gate Voltage (V)
30
15
r
DS(on)
−
Drain-Source On-Resistance (kW)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
g
os
5
200
Common-Source Forward Transconductance
vs. Drain Current
V
GS(off)
=
−2.5
V
g
fs
−
Forward Transconductance (µS)
g
os
−
Output Conductance (µS)
12
r
DS
4
160
T
A
=
−55_C
120
125_C
80
25_C
9
3
6
2
3
r
DS
@ I
D
= 10
mA,
V
GS
= 0 V
g
os
@ V
DS
= 10 V, V
GS
= 0 V
f = 1 kHz
1
40
V
DS
= 10 V
f = 1 kHz
0.01
0.1
I
D
−
Drain Current (mA)
1
0
0
−1
−2
−3
−4
−5
V
GS(off)
−
Gate-Source Cutoff Voltage (V)
0
0
Output Characteristics
100
V
GS(off)
=
−0.7
V
80
I
D
−
Drain Current (µA)
V
GS
= 0 V
−0.1
V
−0.2
V
40
−0.3
V
−0.4
V
20
−0.5
V
I
D
−
Drain Current (µA)
400
500
Output Characteristics
V
GS(off)
=
−2.5
V
V
GS
= 0 V
300
−0.5
V
200
−1.0
V
100
−1.5
V
−2.0
V
60
0
0
4
8
12
16
20
V
DS
−
Drain-Source Voltage (V)
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
0
0
4
8
12
16
20
V
DS
−
Drain-Source Voltage (V)
www.vishay.com
3
2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
100
Transfer Characteristics
V
GS(off)
=
−0.7
V
V
DS
= 10 V
g
fs
−
Forward Transconductance (µS)
200
Transconductance vs. Gate-Source Voltage
V
GS(off)
=
−0.7
V
V
DS
= 10 V
f = 1 kHz
80
I
D
−
Drain Current (µA)
160
T
A
=
−55_C
25_C
60
T
A
= 125_C
40
25_C
120
80
125_C
20
−55_C
0
0
−0.2
−0.4
−0.8
−0.6
V
GS
−
Gate-Source Voltage (V)
−1.0
40
0
0
−0.2
−0.4
−0.6
−0.8
V
GS
−
Gate-Source Voltage (V)
−1.0
500
Transfer Characteristics
V
GS(off)
=
−2.5
V
V
DS
= 10 V
300
g
fs
−
Forward Transconductance (µS)
Transconductance vs. Gate-Source Voltage
V
GS(off)
=
−2.5
V
V
DS
= 10 V
f = 1 kHz
400
I
D
−
Drain Current (µA)
T
A
=
−55_C
25_C
240
T
A
=
−55_C
180
25_C
300
200
120
125_C
60
100
125_C
0
0
−1
−2
−3
−4
−5
V
GS
−
Gate-Source Voltage (V)
0
0
−1
−2
−3
−4
−5
V
GS
−
Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
100
g
fs
R
L
A
V
+
1
)
R g
L os
10 V
I
D
C
iss
−
Input Capacitance (pF)
Assume V
DD
= 15 V, V
DS
= 5 V
R
L
+
60
2.0
Common-Source Input Capacitance
vs. Gate-Source Voltage
f = 1 MHz
1.6
80
A
V
−
Voltage Gain
1.2
V
DS
= 0 V
10 V
40
V
GS(off)
=
−0.7
V
0.8
20
−2.5
V
0.4
0
0.01
0.1
I
D
−
Drain Current (mA)
1
0
0
−4
−8
−12
−16
−20
V
GS
−
Gate-Source Voltage (V)
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
4
2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
f = 1 MHz
C
rss
−
Reverse Feedback Capacitance (pF)
0.4
Hz
160
0.5
200
Equivalent Input Noise Voltage vs. Frequency
V
DS
= 10 V
en
−
Noise Voltage nV /
0.3
V
DS
= 0 V
120
I
D
= 10 mA
0.2
10 V
80
V
GS
= 0 V
0.1
40
0
0
−4
−8
−12
−16
−20
V
GS
−
Gate-Source Voltage (V)
0
10
100
1k
f
−
Frequency (Hz)
10 k
100 k
2
Output Conductance vs. Drain Current
20
r
DS(on)
−
Drain-Source On-Resistance (
Ω )
V
GS(off)
=
−2.5
V
On-Resistance vs. Drain Current
V
GS(off)
=
−0.7
V
g
os
−
Output Conductance (µS)
T
A
=
−55_C
16
1
125_C
25_C
12
8
−2.5
V
4
T
A
= 25_C
0
0.01
0.1
I
D
−
Drain Current (mA)
1
V
DS
= 10 V
f = 1 kHz
0
0.01
0.1
I
D
−
Drain Current (mA)
1
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
www.vishay.com
5
51mcu
京公网安备 11010802033920号
EEWORLD
