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SUB85N04-04-E3

Description
N-Channel 40-V (D-S) 175C MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size56KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SUB85N04-04-E3 Overview

N-Channel 40-V (D-S) 175C MOSFET

SUB85N04-04-E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage40 V
Maximum drain current (Abs) (ID)85 A
Maximum drain current (ID)85 A
Maximum drain-source on-resistance0.004 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)250 W
Maximum pulsed drain current (IDM)240 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrie
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
SUP/SUB85N04-04
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
40
r
DS(on)
(W)
0.004 @ V
GS
= 10 V
I
D
(A)
85
a
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
Ordering Information
SUP85N04-04
SUP85N04-04—E3 (Lead (Pb)-Free)
D S
S
Ordering Information
SUB85N04-04
SUB85N04-04—E3 (Lead (Pb)-Free)
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipation
b
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
40
20
85
a
85
a
240
70
211
250
c
3.75
−55
to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
J
ti t A bi t
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71125
S-41261—Rev. C, 05-Jul-04
www.vishay.com
Free Air (TO-220AB)
R
thJA
R
thJC
Symbol
Limit
40
62.5
0.6
Unit
_C/W
C/W
1

SUB85N04-04-E3 Related Products

SUB85N04-04-E3 SUP85N04-04-E3 SUB85N04-04 SUP85N04-04
Description N-Channel 40-V (D-S) 175C MOSFET N-Channel 40-V (D-S) 175C MOSFET N-Channel 40-V (D-S) 175C MOSFET N-Channel 40-V (D-S) 175C MOSFET
Is it Rohs certified? conform to conform to incompatible incompatible
Reach Compliance Code unknow unknow unknow unknow
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE Single Single
Maximum drain current (Abs) (ID) 85 A 85 A 85 A 85 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e3 e3 e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 250 W 250 W 250 W 250 W
surface mount YES NO YES NO
Terminal surface Matte Tin (Sn) - with Nickel (Ni) barrie Matte Tin (Sn) - with Nickel (Ni) barrie Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1 1 1
Is it lead-free? Lead free - Contains lead Contains lead
Parts packaging code D2PAK - D2PAK TO-220AB
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