SUP/SUB85N04-04
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
40
r
DS(on)
(W)
0.004 @ V
GS
= 10 V
I
D
(A)
85
a
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
Ordering Information
SUP85N04-04
SUP85N04-04—E3 (Lead (Pb)-Free)
D S
S
Ordering Information
SUB85N04-04
SUB85N04-04—E3 (Lead (Pb)-Free)
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipation
b
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
40
20
85
a
85
a
240
70
211
250
c
3.75
−55
to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
J
ti t A bi t
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71125
S-41261—Rev. C, 05-Jul-04
www.vishay.com
Free Air (TO-220AB)
R
thJA
R
thJC
Symbol
Limit
40
62.5
0.6
Unit
_C/W
C/W
1
SUP/SUB85N04-04
Vishay Siliconix
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
= 20 V
V
DS
= 40 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 40 V, V
GS
= 0 V, T
J
= 175_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
Drain-Source On-State Resistance
a
Forward Transconductance
a
r
DS(on)
g
fs
V
GS
= 10 V, I
D
= 30 A, T
J
= 125_C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175_C
V
DS
= 15 V, I
D
= 30 A
30
120
0.0031
0.004
0.0055
0.007
S
W
40
2
4
100
1
50
250
A
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, R
L
= 0.47
W
I
D
^
85 A, V
GEN
= 10 V, R
g
= 2.5
W
V
DS
= 30 V, V
GS
= 10 V, I
D
= 85 A
,
,
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
7620
1325
710
160
40
55
20
115
75
85
35
175
115
130
ns
250
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 85 A, V
GS
= 0 V
I
F
= 85 A, di/dt = 100 A/
A
A/ms
1.1
60
2.6
0.08
85
240
1.4
90
4
0.15
A
V
ns
A
mC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 71125
S-41261—Rev. C, 05-Jul-04
SUP/SUB85N04-04
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V
GS
= 10 thru 7 V
200
I
D
−
Drain Current (A)
6V
I
D
−
Drain Current (A)
200
250
Transfer Characteristics
150
150
100
100
T
C
= 125_C
50
25_C
−55_C
0
50
5V
4V
0
0
2
4
6
8
10
V
DS
−
Drain-to-Source Voltage (V)
0
1
2
3
4
5
6
7
V
GS
−
Gate-to-Source Voltage (V)
Transconductance
250
T
C
=
−55_C
25_C
125_C
r
DS(on)
−
On-Resistance (
W
)
200
g
fs
−
Transconductance (S)
0.004
0.005
On-Resistance vs. Drain Current
V
GS
= 10 V
0.003
150
100
0.002
50
0.001
0
0
20
40
60
80
100
120
0.000
0
20
40
60
80
100
120
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
12000
10000
C
−
Capacitance (pF)
8000
6000
4000
C
oss
2000
0
0
C
rss
8
Capacitance
20
V
DS
= 30 V
I
D
= 85 A
Gate Charge
V
GS
−
Gate-to-Source Voltage (V)
16
C
iss
12
8
4
0
16
24
32
40
0
60
120
180
240
300
V
DS
−
Drain-to-Source Voltage (V)
Q
g
−
Total Gate Charge (nC)
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Document Number: 71125
S-41261—Rev. C, 05-Jul-04
3
SUP/SUB85N04-04
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2.0
On-Resistance vs. Junction Temperature
100
V
GS
= 10 V
I
D
= 30 A
I
S
−
Source Current (A)
Source-Drain Diode Forward Voltage
1.6
r
DS(on)
−
On-Resiistance
(Normalized)
1.2
10
T
J
= 150_C
0.8
0.4
T
J
= 25_C
0.0
−50
−25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
−
Junction Temperature (_C)
V
SD
−
Source-to-Drain Voltage (V)
1000
Avalanche Current vs. Time
Drain Source Breakdown vs.
Junction Temperature
55
100
I
Dav
(a)
51
V
(BR)DSS
(V)
I
AV
(A) @ T
A
= 25_C
I
D
= 250
mA
47
10
I
AV
(A) @ T
A
= 150_C
1
43
39
0.1
0.00001
0.0001
0.001
0.01
0.1
1
t
in
(Sec)
35
−50
−25
0
25
50
75
100
125
150
175
T
J
−
Junction Temperature (_C)
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Document Number: 71125
S-41261—Rev. C, 05-Jul-04
SUP/SUB85N04-04
Vishay Siliconix
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
100
1000
Safe Operating Area
80
I
D
−
Drain Current (A)
I
D
−
Drain Current (A)
10
ms
100
Limited
by r
DS(on)
100
ms
1 ms
10 ms
100 ms
dc
60
10
40
20
1
T
C
= 25_C
Single Pulse
0
0
25
50
75
100
125
150
175
T
C
−
Ambient Temperature (_C)
0.1
0.1
1
10
100
V
DS
−
Drain-to-Source Voltage (V)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
0.01
10
−4
10
−3
10
−2
10
−1
1
10
Square Wave Pulse Duration (sec)
Document Number: 71125
S-41261—Rev. C, 05-Jul-04
www.vishay.com
5
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