b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68857
S11-0181-Rev. B, 07-Feb-11
SUD23N06-31
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
50
V
GS
= 10 V thru 6 V
40
I
D
- Drain Current (A)
5V
10
8
I
D
- Drain Current (A)
30
6
20
4V
4
T
C
= 25 °C
2
T
C
= 125 °C
10
3V
0
0
2
4
6
8
10
T
C
= - 55 °C
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
32
T
C
= - 55 °C
24
R
DS(on)
- On-Resistance ()
g
fs
- Transconductance (S)
25 °C
125 °C
0.08
0.10
Transfer Characteristics
0.06
V
GS
= 4.5 V
0.04
V
GS
= 10 V
0.02
16
8
0
0
5
10
15
20
25
0.00
0
10
20
30
40
50
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
1000
On-Resistance vs. Drain Current
10
I
D
= 23 A
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
= 30
V
V
DS
= 15
V
6
V
DS
= 45
V
4
800
C - Capacitance (pF)
C
iss
600
8
400
200
C
rss
0
0
10
20
C
oss
2
0
30
40
50
60
0
2
4
6
8
10
12
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
Document Number: 68857
S11-0181-Rev. B, 07-Feb-11
Gate Charge
www.vishay.com
3
SUD23N06-31
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.1
I
D
= 15 A
1.8
R
DS(on)
- On-Resistance
I
S
- Source Current (A)
V
GS
= 10
V
10
T
J
= 150 °C
T
J
= 25 °C
1
100
(Normalized)
1.5
V
GS
= 4.5
V
1.2
0.1
T
J
= - 50 °C
0.9
0.01
0.6
- 50
- 25
0
25
50
75
100
125
150
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
0.08
0.5
Source-Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.2
0.06
T
J
= 125 °C
0.04
V
GS(th)
Variance
(V)
- 0.1
I
D
= 1 mA
I
D
= 250
µA
- 0.7
- 0.4
0.02
T
J
= 25 °C
0.00
0
1
2
3
4
5
6
7
8
9
10
- 1.0
- 50
- 25
0
25
50
75
100
125
150
V
GS
- Gate-to-Source
Voltage
(V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
500
100
Threshold Voltage
Limited
by
R
DS(on)
*
400
I
D
- Drain Current (A)
10
10
µs
100
µs
Power (W)
300
1 ms
1
10 ms
100 ms, DC
200
0.1
100
T
C
= 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
0
0.001
0.01
0.1
Time (s)
1
10
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Single Pulse Power, Junction-to-Ambient
Single Pulse Power, Junction-to-Case
www.vishay.com
4
Document Number: 68857
S11-0181-Rev. B, 07-Feb-11
SUD23N06-31
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
25
20
I
D
- Drain Current (A)
15
10
5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*, Junction-to-Case
40
3.0
2.5
30
2.0
Power (W)
Power (W)
20
1.5
1.0
10
0.5
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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Embedded System
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