b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68857
S-81948-Rev. A, 25-Aug-08
New Product
SUD23N06-31
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
V
GS
= 10 thru 6 V
40
I
D
- Drain Current (A)
5V
10
8
I
D
- Drain Current (A)
30
6
20
4V
4
T
C
= 25 °C
2
T
C
= 125 °C
10
3V
0
0
2
4
6
8
10
T
C
= - 55 °C
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
32
T
C
= - 55 °C
24
R
DS(on)
- On-Resistance (Ω)
g
fs
- Transconductance (S)
25 °C
125 °C
0.08
0.10
Transfer Characteristics
0.06
V
GS
= 4.5 V
0.04
V
GS
= 10 V
0.02
16
8
0
0
5
10
15
20
25
0.00
0
10
20
30
40
50
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
1000
On-Resistance vs. Drain Current
10
I
D
= 23 A
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
= 30
V
V
DS
= 15
V
6
V
DS
= 45
V
4
800
C - Capacitance (pF)
C
iss
600
8
400
200
C
rss
0
0
10
20
C
oss
2
0
30
40
50
60
0
2
4
6
8
10
12
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
Document Number: 68857
S-81948-Rev. A, 25-Aug-08
Gate Charge
www.vishay.com
3
New Product
SUD23N06-31
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.1
I
D
= 15 A
1.8
R
DS(on)
- On-Resistance
I
S
- Source Current (A)
V
GS
= 10
V
10
T
J
= 150 °C
T
J
= 25 °C
1
100
(Normalized)
1.5
V
GS
= 4.5
V
1.2
0.1
T
J
= - 50 °C
0.9
0.01
0.6
- 50
- 25
0
25
50
75
100
125
150
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
0.08
0.5
Source-Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.2
0.06
T
J
= 125 °C
0.04
V
GS(th)
Variance
(V)
- 0.1
I
D
= 1 mA
I
D
= 250
µA
- 0.7
- 0.4
0.02
T
J
= 25 °C
0.00
0
1
2
3
4
5
6
7
8
9
10
- 1.0
- 50
- 25
0
25
50
75
100
125
150
V
GS
- Gate-to-Source
Voltage
(V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
500
100
Threshold Voltage
Limited
by
R
DS(on)
*
400
I
D
- Drain Current (A)
10
10
µs
100
µs
Power (W)
300
1 ms
1
10 ms
100 ms, DC
200
0.1
100
T
C
= 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
0
0.001
0.01
0.1
Time (s)
1
10
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Single Pulse Power, Junction-to-Ambient
Single Pulse Power, Junction-to-Case
www.vishay.com
4
Document Number: 68857
S-81948-Rev. A, 25-Aug-08
New Product
SUD23N06-31
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
25
20
I
D
- Drain Current (A)
15
10
5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*, Junction-to-Case
40
3.0
2.5
30
2.0
Power (W)
Power (W)
20
1.5
1.0
10
0.5
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
I use two buttons PA0 and PC13. First, I connect them to their respective interrupt lines, and then enter the shutdown mode through PA0. It is reasonable to press PC13 to wake up, but in actual operat...
When I use the __try __finally block in driver development, a link error will appear during linking: unresolved external symbol __except_handler4 Is there a missing link library? The libraries I linke...
Many Dopod and Samsung machines use trackballs and some sensor devices, but I don't know how to add a mouse to Windows Mobile. I adjusted the LCD driver, but still couldn't achieve the desired effect....
Current Development Status of DVR Market
A DVR, or digital video recorder, uses a hard disk for recording, unlike traditional analog video recorders. It's often called a DVR because it's a com...[Details]
On August 25th, TSMC, the world's leading contract chip manufacturer, attracted significant attention for its decision to build a chip manufacturing facility in Arizona. TSMC primarily manufactures...[Details]
When discussing autonomous driving technology, there are often two extremes: on the one hand, there's the vision of "fully autonomous driving," while on the other, there's concern about potential s...[Details]
introduction
According to the China Fire Statistics Yearbook, electrical fires accounted for more than 30% of fire accidents in the past decade, and the trend is increasing year by year. They ...[Details]
As AI accelerates across industries, the demand for data center infrastructure is also growing rapidly.
Keysight Technologies, in collaboration with Heavy Reading, released the "Beyo...[Details]
Electric vehicles are becoming increasingly popular, with increasingly longer ranges. There are two ways to charge electric vehicles: slow charging and fast charging. Which is the most suitable? Sl...[Details]
Chinese characters are extensive and profound, and there are many different names for ESD tubes. How many of them do you know?
As far as I know, ESD diodes are currently known as ESD p...[Details]
A patent disclosed by Ford proposes replacing traditional segmented side curtain airbags with integrated full-width side curtain airbags that span the side of the vehicle and can be deployed simult...[Details]
Plug-in hybrid vehicles (PHEVs) utilize two powertrains. Their pure electric range is typically inferior to that of pure electric vehicles, often reaching less than half that. Currently, mainstream...[Details]
Consumer demand for premium listening experiences has driven rapid evolution in the wireless headphone market in recent years. Hybrid designs, which utilize two drivers per earbud to enhance sound ...[Details]
Renesas Electronics' new ultra-low-power RA4C1 MCU features advanced security and a dedicated peripheral set, making it ideal for metering and other applications.
The new product mee...[Details]
Smartphones can be incredibly unintelligent. For example, consider an office full of people, each absorbed in their work. Suddenly, the silence is broken by a burst of loud pop music. A colleague's...[Details]
In camera and display systems, the demand for high-performance and low-power data interfaces is driving continuous technological evolution. The evolution of MIPI D-PHY and MIPI C-PHY clearly ...[Details]
0 Introduction
With a rapidly aging population, a young couple is now required to care for an increasing number of elderly people, leading to a growing difficulty in providing care for them. E...[Details]
We know that the power output by the engine does not directly act on the wheels to drive the car, but needs to pass through a series of power transmission mechanisms. So how is the power transmitte...[Details]
Embedded System
京公网安备 11010802033920号
EEWORLD
