This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD50N10-18P
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 50 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 15 A
0.85
80
160
57
23
T
C
= 25 °C
50
100
1.5
120
240
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 50 V, R
L
= 1
I
D
50 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
DS
= 50 V, V
GS
= 10 V, I
D
= 50 A
V
DS
= 50 V, V
GS
= 0 V, f = 1 MHz
2600
230
80
48
16
13
1.6
12
10
18
8
2.5
20
20
35
15
ns
75
nC
pF
Resistance
a
Forward Transconductance
a
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 15 A
50
0.015
33
0.0185
2.5
100
110
- 12.5
5
± 100
1
50
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 69846
S12-1958-Rev. D, 13-Aug-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD50N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise note)
100
V
GS
= 10
V
thru
8 V
80
I
D
- Drain Current (A)
V
GS
= 7
V
60
I
D
- Drain Current (A)
1.6
2.0
1.2
40
0.8
T
C
= 25 °C
0.4
T
C
= 125 °C
T
C
= - 55 °C
0.0
20
V
GS
= 6
V
0
0
1
2
3
4
5
0
2
4
6
8
10
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
75
T
C
= - 55 °C
R
DS(on)
- On-Resistance (Ω)
g
fs
- Transconductance (S)
60
0.027
0.036
Transfer Characteristics
45
T
C
= 25 °C
T
C
= 125 °C
0.018
V
GS
= 10
V
30
0.009
15
0
0
10
20
30
40
50
0.000
0
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
0.10
I
D
= 15 A
R
DS(on)
- On-Resistance (Ω)
0.08
C - Capacitance (pF)
2800
3500
On-Resistance vs. Drain Current
C
iss
0.06
2100
0.04
T
A
= 150 °C
1400
0.02
T
A
= 25 °C
0.00
4
5
6
7
8
9
10
700
C
oss
0
C
rss
0
20
40
60
80
100
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Gate-to-Source Voltage
Capacitance
Document Number: 69846
S12-1958-Rev. D, 13-Aug-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD50N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
I
D
= 20 A
V
GS
- Gate-to-Source
Voltage
(V)
R
DS(on)
- On-Resistance
(Normalized)
15
V
DS
= 50
V
V
DS
=
80 V
10
2.0
2.5
I
D
= 15 A
V
GS
= 10
V
1.5
5
1.0
0
0
20
40
60
80
100
0.5
- 50
- 25
0
25
50
75
100
125
150
175
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
T
J
= 150 °C
T
J
= 25 °C
1
V
GS(th)
Variance
(V)
0.7
On-Resistance vs. Junction Temperature
10
I
S
- Source Current (A)
0.2
- 0.3
I
D
= 5 mA
- 0.8
0.1
- 1.3
0.01
- 1.8
I
D
= 250
µA
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 2.3
- 50
- 25
0
25
50
75
100
125
150
175
V
SD
- Source-to-Drain
Voltage
(V)
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
300
600
Threshold Voltage
240
500
400
Power (W)
Power (W)
180
300
120
T
A
= 25 °C
60
200
T
C
= 25 °C
100
0
0.001
0
0.01
0.1
1
Time (s)
10
100
1000
0.001
0.01
0.1
Time (s)
1
10
Single Pulse Power, Junction-to-Ambient
Single Pulse Power, Junction-to-Case
Document Number: 69846
S12-1958-Rev. D, 13-Aug-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUD50N10-18P
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1000
1000
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Limited
by
R
DS(on)*
10
µs,
100
µs
100
Limited
by
R
DS(on)*
10
µs
100
µs
1 ms
10 ms
100 ms, DC
10
1 ms
1
10 ms
100 ms
0.1
T
A
= 25 °C
Single Pulse
1s
10 s
100 s, DC
10
100
1000
10
1
0.1
T
C
= 25 °C
Single Pulse
0.01
0.1
1.0
0.01
0.1
1.0
10
100
1000
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
10
60
Safe Operating Area, Junction-to-Case
8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
50
Package Limited
40
6
30
4
20
2
10
0
0
25
50
75
100
125
150
175
0
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature (°C)
T
C
- Case Temperature (°C)
Current Derating**, Junction-to-Ambient
Current Derating**, Junction-to-Case
** The power dissipation P
D
is based on T
J(max.)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69846
S12-1958-Rev. D, 13-Aug-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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