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SUF15J

Description
1.5 A, 600 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size78KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

SUF15J Overview

1.5 A, 600 V, SILICON, RECTIFIER DIODE

SUF15J Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.8 V
Maximum non-repetitive peak forward current50 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1.5 A
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.035 µs
surface mountNO
SUF15G & SUF15J
Vishay General Semiconductor
Ultrafast Plastic Rectifier
FEATURES
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• Low leakage current
• High forward surge capability
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and
freewheeling application in switching mode converters
and inverters for consumer, computer and
telecommunication.
MECHANICAL DATA
Case:
GP20
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
Color band denotes cathode end
GP20
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
1.5 A
400 V, 600 V
50 A
35 ns
1.8 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current, 0.375" (9.5 mm) lead
length at T
A
= 50 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
SUF15G
400
280
400
1.5
50
- 55 to + 150
SUF15J
600
420
600
UNIT
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
(1)
Maximum peak reverse current at
rated peak reverse voltage
Maximum reverse recovery time
Typical junction capacitance
1.5 A
T
A
= 25 °C T
A
= 100 °C
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
4.0 V, 1 MHz
TEST CONDITIONS
SYMBOL
V
F
I
R
t
rr
C
J
SUF15G
1.8
10
100
35
35
SUF15J
UNIT
V
µA
ns
pF
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Document Number: 88753
Revision: 20-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1

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SUF15J SUF15J-E3/54 SUF15G SUF15J-E3/73 SUF15G-E3/73 SUF15G-E3/54
Description 1.5 A, 600 V, SILICON, RECTIFIER DIODE 1.5 A, 600 V, SILICON, RECTIFIER DIODE 1.5 A, 400 V, SILICON, RECTIFIER DIODE 1.5 A, 600 V, SILICON, RECTIFIER DIODE DIODE GEN PURP 400V 1.5A GP20 DIODE GEN PURP 400V 1.5A GP20
Reach Compliance Code unknow unknow unknow unknow unknown unknown
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V 1.8 V
Maximum non-repetitive peak forward current 50 A 50 A 50 A 50 A 50 A 50 A
Number of components 1 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
Maximum repetitive peak reverse voltage 600 V 600 V 400 V 600 V 400 V 400 V
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs
surface mount NO NO NO NO NO NO
Is it Rohs certified? - conform to - conform to conform to conform to
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