SUM09N20-270
New Product
Vishay Siliconix
N-Channel 200-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
V
(BR)DSS
(V)
200
r
DS(on)
(W)
0.270 @ V
GS
= 10 V
0.300 @ V
GS
= 6 V
I
D
(A)
9
8.5
D
TrenchFETr Power MOSFETS
D
175_C Junction Temperature
D
New Low Thermal Resistance Package
D
TO-263
G
G
D S
S
N-Channel MOSFET
Top View
Ordering Information: SUM09N20-270
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
c
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
200
"20
9
5.2
10
7
2.45
60
b
3.75
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
Notes
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1” square PCB (FR-4 material).
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
www.vishay.com
Symbol
R
thJA
R
thJC
Limit
40
2.5
Unit
_C/W
1
SUM09N20-270
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
=25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 160 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
g
I
DSS
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= 160 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
I
D(on)
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
Drain-Source On-State
Drain Source On State Resistance
a
V
GS
= 10 V, I
D
= 5 A, T
J
= 125_C
r
DS( )
DS(on)
V
GS
= 10 V, I
D
= 5 A, T
J
= 175_C
V
GS
= 6 V, I
D
= 5 A
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 5 A
0.240
15
10
0.216
0.270
0.54
0.71
0.300
S
W
200
V
2
4
"100
1
50
250
A
m
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 100 V, R
L
= 10
W
I
D
^
10 A, V
GEN
= 10 V, R
G
= 2.5
W
V
DS
= 100 V, V
GS
= 10 V, I
D
= 10 A
,
,
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
580
75
30
11
2.7
4
4.0
10
35
25
40
15
55
40
60
ns
W
17
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 10 A, di/dt = 100 A/ms
,
m
I
F
= 10 A, V
GS
= 0 V
0.9
100
5
0.25
9
10
1.5
150
8
0.6
A
V
ns
A
mC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
SUM09N20-270
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V
GS
= 10 thru 6 V
8
I
D
- Drain Current (A)
5V
6
I
D
- Drain Current (A)
8
10
Vishay Siliconix
Transfer Characteristics
6
4
4
T
C
= 125_C
2
25_C
2
4V
0
0
2
4
6
8
10
- 55_C
0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transconductance
30
T
C
= - 55_C
25_C
g
fs
- Transconductance (S)
20
125_C
r
DS(on)
- On-Resistance (
W
)
25
0.4
0.5
On-Resistance vs. Drain Current
0.3
V
GS
= 6 V
0.2
V
GS
= 10 V
0.1
15
10
5
0
0
2
4
6
8
10
0.0
0
2
4
6
8
10
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Capacitance
800
700
V
GS
- Gate-to-Source Voltage (V)
16
600
500
400
300
200
100
0
0
40
80
120
160
200
C
rss
C
oss
C
iss
20
Gate Charge
V
DS
= 100 V
I
D
= 10 A
C - Capacitance (pF)
12
8
4
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
Q
g
- Total Gate Charge (nC)
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3
SUM09N20-270
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
3.0
V
GS
= 10 V
I
D
= 5 A
I
S
- Source Current (A)
100
Source-Drain Diode Forward Voltage
2.5
r
DS(on)
- On-Resistance (
W)
(Normalized)
2.0
T
J
= 150_C
10
T
J
= 25_C
1.5
1.0
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
T
J
- Junction Temperature (_C)
V
SD
- Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
240
230
I
D
= 1.0 mA
V
(BR)DSS
(V)
220
210
200
190
180
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (_C)
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4
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
SUM09N20-270
New Product
THERMAL RATINGS
Vishay Siliconix
Maximum Avalanche and Drain Current
vs. Case Temperature
10
100
Safe Operating Area
8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
10
Limited
by r
DS(on)
10
ms
100
ms
6
4
1 ms
1
10 ms
T
C
= 25_C
Single Pulse
dc, 100 ms
2
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
1000
T
C
- Ambient Temperature (_C)
V
DS
- Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration (sec)
Document Number: 72158
S-03414—Rev. A, 03-Mar-03
www.vishay.com
5
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