EEWORLDEEWORLDEEWORLD

Part Number

Search

MV838CCHIP

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 68pF C(T), 30V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size116KB,2 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

MV838CCHIP Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 68pF C(T), 30V, Silicon, Abrupt

MV838CCHIP Parametric

Parameter NameAttribute value
package instructionX-XUUC-N
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance2%
Minimum diode capacitance ratio2
Nominal diode capacitance68 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeX-XUUC-N
Number of components1
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Certification statusNot Qualified
minimum quality factor15
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2e-7 µA
Reverse test voltage25 V
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Varactor Diode ClassificationABRUPT

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1094  305  721  274  2783  23  7  15  6  57 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号