V10P10 datasheet, PDF - EEWORLD Datasheet

V10P10

www.vishay.com

Vishay General Semiconductor

High Current Density Surface Mount

MOS Barrier Schottky Rectifier Ultra Low

V

F

= 0.453 V at I

F

= 5 A

TMBS

®

eSMP

®

Series

K

FEATURES

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

Available

1

2

• High efficiency operation

• Meets MSL level 1, per

LF maximum peak of 260 °C

J-STD-020,

SMPC

(TO-277A)

K

Cathode

Anode 1

Anode 2

• AEC-Q101 qualified available

- Automotive ordering code; base P/NHM3

• Material categorization: for definitions of compliance

please see

www.vishay.com/doc?99912

TYPICAL APPLICATIONS

PRIMARY CHARACTERISTICS

I

F(AV)

V

RRM

I

FSM

E

AS

V

F

at I

F

= 10 A

T

J

max.

Package

Diode variations

10 A

100 V

180 A

100 mJ

0.574 V

150 °C

TO-277A (SMPC)

Single die

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

MECHANICAL DATA

Case:

TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant, and

commercial grade

Base P/NHM3_X - halogen-free, RoHS-compliant and

AEC-Q101 qualified

(“_X” denotes revision code e.g. A, B,.....)

Terminals:

Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

MAXIMUM RATINGS

(T

A

= 25 °C unless otherwise noted)

PARAMETER

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

Non-repetitive avalanche energy at I

AS

= 2.0 A, T

J

= 25 °C

Peak repetitive reverse current at t

p

= 2 μs, 1 kHz, T

J

= 38 °C ± 2 °C

Operating junction temperature range

Storage temperature range

V

RRM

I

F(AV)

I

FSM

E

AS

I

RRM

T

J (1)

T

STG

SYMBOL

V10P10

V1010

100

10

180

100

1.0

-40 to +175

-55 to +175

V

A

mJ

A

°C

UNIT

Note

(1)

The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R

D

J

θJA

Revision: 23-Jun-17

Document Number: 89006

1

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

V10P10

www.vishay.com

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS

(T

A

= 25 °C unless otherwise noted)

PARAMETER

Breakdown voltage

TEST CONDITIONS

I

R

= 1 mA

I

F

= 5 A

Instantaneous forward voltage

I

F

= 10 A

I

F

= 5 A

I

F

= 10 A

V

R

= 70 V

Reverse current

V

R

= 100 V

Notes

(2)

Pulse test: 300 μs pulse width, 1 % duty cycle

(3)

Pulse test: Pulse width

≤

40 ms

T

A

= 25 °C

T

A

= 25 °C

V

F (1)

T

A

= 125 °C

T

A

= 25 °C

T

A

= 125 °C

T

A

= 25 °C

T

A

= 125 °C

I

R (2)

SYMBOL

V

BR

TYP.

100 (minimum)

0.512

0.625

0.453

0.574

7.1

4.5

30.4

10.4

MAX.

-

0.68

-

0.62

-

150

20

μA

mA

μA

mA

V

UNIT

V

THERMAL CHARACTERISTICS

(T

A

= 25 °C unless otherwise specified)

PARAMETER

Typical thermal resistance

Note

(1)

Units mounted on recommended PCB 1 oz. pad layout

SYMBOL

R

θJA

R

θJL

(1)

V10P10

60

3

UNIT

°C/W

ORDERING INFORMATION

(Example)

PREFERRED P/N

V10P10-M3/86A

V10P10-M3/87A

V10P10HM3_A/H

(1)

V10P10HM3_A/I

(1)

UNIT WEIGHT (g)

0.10

PACKAGE CODE

86A

87A

H

I

BASE QUANTITY

1500

6500

1500

6500

DELIVERY MODE

7" diameter plastic tape and reel

13" diameter plastic tape and reel

7" diameter plastic tape and reel

13" diameter plastic tape and reel

Note

AEC-Q101 qualified

Revision: 23-Jun-17

Document Number: 89006

2

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

V10P10

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Vishay General Semiconductor

RATINGS AND CHARACTERISTICS CURVES

(T

A

= 25 °C unless otherwise specified)

12

Resistive or Inductive Load

100

Instantaneous Reverse Current (mA)

Average Forward Current (A)

10

T

J

= 150 °C

10

T

J

= 125 °C

8

1

6

0.1

T

J

= 25 °C

4

2

T

L

measured

at the Cathode Band Terminal

0.01

0

25

50

75

100

125

150

175

0.001

10

20

30

40

50

60

70

80

90

100

Lead Temperature (°C)

Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 4 - Typical Reverse Characteristics

8

D = 0.3

7

D = 0.2

D = 0.1

D = 0.5 D = 0.8

10 000

6

5

4

3

2

1

0

1

D = 1.0

Junction Capacitance (pF)

12

Average Power Loss (W)

1000

T

D = t

p

/T

2

3

4

5

6

7

8

9

t

p

100

10 11

0.1

1

10

100

Average Forward Current (A)

Reverse Voltage (V)

Fig. 2 - Forward Power Loss Characteristics

Fig. 5 - Typical Junction Capacitance

100

Instantaneous Forward Current (A)

Transient Thermal Impedance (°C/W)

Junction to Ambient

T

J

= 150 °C

10

T

J

= 125 °C

1

10

0.1

T

J

= 25 °C

T

J

= -40 °C

0.01

0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

1

0.01

0.1

1

10

100

Instantaneous Forward Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics

t - Pulse Duration (s)

Fig. 6 - Typical Transient Thermal Impedance

Revision: 23-Jun-17

Document Number: 89006

3

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

V10P10

www.vishay.com

PACKAGE OUTLINE DIMENSIONS

in inches (millimeters)

SMPC

(TO-277A)

0.187 (4.75)

0.175 (4.45)

K

0.016 (0.40)

0.006 (0.15)

Vishay General Semiconductor

0.262 (6.65)

0.250 (6.35)

0.242 (6.15)

0.238 (6.05)

2

1

0.171 (4.35)

0.167 (4.25)

0.146 (3.70)

0.134 (3.40)

0.087 (2.20)

0.075 (1.90)

0.047 (1.20)

0.039 (1.00)

Mounting Pad Layout

0.189 (4.80)

MIN.

0.189 (4.80)

0.173 (4.40)

0.155 (3.94)

NOM.

0.030 (0.75) NOM.

0.268

(6.80)

0.186 (4.72)

MIN.

0.049 (1.24)

0.037 (0.94)

0.084 (2.13) NOM.

0.053 (1.35)

0.041 (1.05)

Conform to JEDEC

®

TO-277A

0.050 (1.27)

MIN.

0.041

(1.04)

0.055 (1.40)

MIN.

Revision: 23-Jun-17

Document Number: 89006

4

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

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Revision: 08-Feb-17

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Document Number: 91000

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