SFH610A / SFH6106
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Reliability, 5300 V
RMS
Features
• Good CTR Linearity Depending on
Forward Current
• Isolation Test Voltage, 5300 V
RMS
e3
• High Collector-Emitter Voltage,
V
CEO
= 70 V
• Low Saturation Voltage
• Fast Switching Times
• Low CTR Degradation
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, 0.100" (2.54 mm) Spacing
• High Common-Mode Interference Immunity
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A
C
1
2
SFH610A
4
3
E
C
SFH6106
A 1
C 2
4 E
3 C
i179056
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• CSA 93751
• BSI IEC60950 IEC60065
Order Information
Part
SFH610A-1
SFH610A-2
SFH610A-3
SFH610A-4
SFH610A-5
SFH6106-1
SFH6106-2
SFH6106-3
SFH6106-4
SFH6106-5T
SFH610A-1X006
SFH610A-1X018T
SFH610A-2X006
SFH610A-3X006
SFH610A-3X007
SFH610A-4X006
Remarks
CTR 40 - 80 %, DIP-4
CTR 63 - 125 %, DIP-4
CTR 100 - 200 %, DIP-4
CTR 160 - 320 %, DIP-4
CTR 250 - 500 %, DIP-4
CTR 40 - 80 %, SMD-4
CTR 63 - 125 %, SMD-4
CTR 100 - 200 %, SMD-4
CTR 160 - 320 %, SMD-4
CTR 250 - 500 %, SMD-4, tape and reel
CTR 40 - 80 %, DIP-4 400 mil
CTR 40 - 80 %, SMD-4, wide leadspread
CTR 63 - 125 %, DIP-4 400 mil
CTR 100 - 200 %, DIP-4 400 mil
CTR 100 - 200 %, SMD-4
CTR 160 - 320 %, DIP-4 400 mil
Description
The SFH610A (DIP) and SFH6106 (SMD) feature a
high current transfer ratio, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared diode emitter, which is optically cou-
pled to a silicon planar phototransistor detector, and
is incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spac-
ing.
Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
up to an operation voltage of 400 V
RMS
or DC. Spec-
ifications subject to change.
For additional information on the available options refer to
Option Information.
Document Number 83666
Rev. 1.9, 23-Mar-06
www.vishay.com
1
SFH610A / SFH6106
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
DC Forward current
Surge forward current
Power dissipation
t
≤
10 µs
Test condition
Symbol
V
R
I
F
I
FSM
P
diss
Value
6.0
60
2.5
100
Unit
V
mA
A
mW
Output
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
t
≤
1.0 ms
Power dissipation
Test condition
Symbol
V
CE
V
EC
I
C
I
C
P
diss
Value
70
7.0
50
100
150
Unit
V
V
mA
mA
mW
Coupler
Parameter
Isolation test voltage between
emitter and detector, refer to
climate DIN 40046, part 2,
Nov. 74
Creepage
Clearance
Insulation thickness between
emitter and detector
Comparative Tracking index per
DIN IEC 112/VDEO 303, part 1
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
max. 10 s. dip soldering
distance to seating plane
≥
1.5 mm
R
IO
R
IO
T
stg
T
amb
T
j
T
sld
Test condition
Symbol
V
ISO
Value
5300
Unit
V
RMS
≥
7.0
≥
7.0
≥
0.4
≥
175
≥
10
12
≥
10
11
- 55 to + 150
- 55 to + 100
100
260
mm
mm
mm
Ω
Ω
°C
°C
°C
°C
www.vishay.com
2
Document Number 83666
Rev. 1.9, 23-Mar-06
SFH610A / SFH6106
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Forward voltage
Reverse current
Capacitance
Thermal resistance
Test condition
I
F
= 60 mA
V
R
= 6.0 V
V
R
= 0 V, f = 1.0 MHz
Symbol
V
F
I
R
C
O
R
thja
Min
Typ.
1.25
0.01
13
750
Max
1.65
10
Unit
V
µA
pF
K/W
Output
Parameter
Collector-emitter capacitance
Thermal resistance
Collector-emitter leakage
current
V
CE
= 10 V
SFH610A-1
SFH6106-1
SFH610A-2
SFH6106-2
SFH610A-3
SFH6106-3
SFH610A-4
SFH6106-4
SFH610A-5
SFH6106-5T
Test condition
V
CE
= 5 V, f = 1.0 MHz
Part
Symbol
C
CE
R
thja
I
CEO
I
CEO
I
CEO
I
CEO
I
CEO
Min
Typ.
5.2
500
2.0
2.0
5.0
5.0
5.0
50
50
100
100
100
Max
Unit
pF
K/W
nA
nA
nA
nA
nA
Coupler
Parameter
Collector-emitter saturation
voltage
Coupling capacitance
Test condition
I
F
= 10 mA, f = 1.0 MHz
Symbol
V
CEsat
C
C
Min
0.4
Typ.
0.25
0.4
Max
Unit
V
pF
Document Number 83666
Rev. 1.9, 23-Mar-06
www.vishay.com
3
SFH610A / SFH6106
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
I
F
R
L
= 75
Ω
V
CC
= 5 V
I
C
47
Ω
isfh610a_01
isfh610a_04
Figure 1. Linear Operation ( without Saturation)
Figure 4. Output Characteristics (typ.) Collector Current vs.
Collector-Emitter Voltage
V
F = f (IF)
I
F
1.0 kΩ
V
CC
= 5 V
47
Ω
isfh610a_02
isfh610a_05
Figure 2. Switching Operation (with Saturation)
Figure 5. Diode Forward Voltage vs. Forward Current
f = 1.0 MHz
IF = 10 mA,
V
CC = 5.0
V
isfh610a_03
isfh610a_06
Figure 3. Current Transfer Ratio (CTR) vs. Temperature
Figure 6. Transistor Capacitance (typ.) vs. Collector-Emitter
Voltage
Document Number 83666
Rev. 1.9, 23-Mar-06
www.vishay.com
5
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