NextPower MOSFETs
Smaller, Faster, Cooler
NextPower 25 V & 30 V MOSFETs
in LFPAK (Power-SO8)
NXP introduces a range of high performance
N-channel, logic-level MOSFETs in LFPAK
As a power design engineer, compromise is never far from your mind. Do I choose a low R
DS(on)
device and accept the
higher output capacitance? Do I demand the lowest gate charge characteristics to reduce switching losses but then find
that the package options are no longer ideal in my application?
The NextPower range of MOSFETs from NXP provides uniquely balanced characteristics across the six most important
parameters essential for your latest high efficiency and high reliability designs. More performance, less compromise…
Many competitors focus only on optimising R
DS(on)
and Q
g
. As Q
g
gets lower then losses due to Q
oss
and Q
gd
become
more significant. NextPower uses Superjunction technology to provide the optimum balance between low R
DS(on)
, low
Q
oss
, low Q
g(tot)
and Q
gd
to give optimum switching performance. NextPower delivers superior SOA performance, and
low Q
oss
reduces the losses between the output DRAIN & SOURCE terminals. NextPower also delivers the lowest R
DS(on)
with sub 1 mΩ types at both 25 V and 30 V.
LFPAK packaging provides rugged power switching on a compact 5 mm x 6 mm footprint compatible with other
Power-SO8 vendors. The unique benefits of LFPAK make it the best package choice for demanding applications or where
high-reliability is required. It also allows for visual inspection, reducing the need for costly X-ray equipment to detect
solder defects as is common with QFN style Power-SO8 packages.
Key benefits
}
High efficiency in power switching applications
}
Industry’s lowest R
DS(on)
Power-SO8 - Less than 1 mΩ
at 25 V and 30 V
}
Low Q
oss
for reduced output losses between DRAIN &
SOURCE
}
Low Q
gd
for reduced switching losses and high frequency
switching
}
20 V rated GATE provides better tolerance to voltage
transients than lateral MOSFET types
}
Superior ‘Safe Operating Area’ performance compared
to other Trench MOSFET vendors
}
Optimised for 4.5 V gate drive voltage
}
Optimum switching performance under light & heavy
load conditions
}
LFPAK package for compatibility with other vendor
Power-SO8 types
}
Eliminates costly X-ray inspection – LFPAK solder joints
can be optically inspected
Key applications
}
Synchronous buck regulators
}
DC-DC conversion
}
Voltage regulator modules (VRM)
}
Power OR-ing
2
NextPower MOSFETs - Visit us at www.nxp.com/mosfets
Benefits of Superjunction technology
Many suppliers focus on two favourable indicators when defining MOSFET performance, but this only tells part of the story.
The spider chart below shows the relative performance of NextPower versus the leading MOSFET vendors, comparing
the six most important MOSFET parameters required for high-performance & high reliability switching applications. The
outside edge of the graph represents the ‘best-in-class’ performance, whilst scoring towards the centre of the graph
represents a weakness.
}
Low R
DS(on)
gives low I
2
R losses and superior performance
when used in a SYNC FET or power OR-ing application
}
Low Q
oss
gives reduced losses between the drain
& source terminals since the energy stored in
the output capacitance (C
oss
) is wasted whenever
the voltage changes across the output terminals
}
SOA performance provides tolerance to overload & fault
conditions. The graph shows the maximum allowable
current for a 1 mS pulse at V
DS
=10 V
}
Low Miller charge (Q
GD
) gives reduced switching losses
between the MOSFET’s drain & source terminals when
the MOSFET turns ON or turns OFF
}
Low gate charge (Q
G
) gives reduced losses in the gate
drive circuit since less energy is required to turn the
MOSFET ON & OFF
}
Superior junction temperature rating, T
j(max)
, is proof that
LFPAK is the most rugged Power-SO8 package available.
LFPAK is the best choice for demanding environments
and where high reliability is required
Comparison of NextPower technology with key competitor types
RDS(on)max
@ Vgs = 4.5 V
Q
oss
FOM
T
j(max)
NXP
Competitor A
Competitor B
SOA rating
Combined Q
G
&
Q
GD
FOM
NextPower MOSFETs - Visit us at www.nxp.com/mosfets
3
Superjunction technology
NextPower MOSFETs use ‘Superjunction’ silicon technology to
deliver the optimum balance between low R
DS
, low Q
G(tot)
,
low
Q
GD
, high SOA performance and low C
oss
at 25 V and 30 V.
Superjunction technology combines the benefits of a lateral
MOSFET, (low Q
g(tot)
and low Q
GD
) with the benefits of a
Trench-MOSFET (low R
DS(on)
and 20 V rugged GATE rating)
resulting in a uniquely balanced specification.
NextPower uses an optimized balance of the different
resistance elements in the MOSFET to achieve a lower
on-resistance for every cell. The low cell resistance means that
NextPower types typically require fewer cells than competitor
devices to achieve the same R
DS(on)
,
and a lower cell count
provides lower Q
G(tot
)
, low Q
GD
, low C
oss
and superior ‘Safe
operating area’ ruggedness.
Source
n+
Gate
p-Body
NextPower technology uses p-Type
pillars to improve the breakdown
voltage in the OFF state, and a heavily
doped n-Type drift region to achieve
exceptionally low ON resistance.
Since fewer cells are required to
achieve a given R
DS
rating, then gate
charge (Q
G
), Miller charge (Q
GD
),
output capacitance (C
oss
) are all
reduced and optimum ruggedness
(denoted by the safe operating area
characteristics) is achieved.
n-Type
p-Type
DRIFT REGION PILLARS
Drain
NextPower types – parametric data
The 25 V and 30 V types shown below are recommended for synchronous buck regulators, the low R
DS(on)
types are also highly
recommended for Power OR-ing applications and low voltage isolated power supply topologies.
25 V NextPower types
Type
Voltage (V)
R
DS(on)
typ
V
GS
= 4.5 V (mΩ)
0.95
1.2
1.35
2
2.2
2.6
3.45
3.7
4.25
4.5
Q
G
(typ)
V
GS
= 4.5 V (nC)
51
39
31
28
27
18
16
14
10.1
10.9
Q
GD
(typ)
V
GS
= 4.5 V (nC)
14
11
8.3
7.8
7.4
5.2
4.4
4
3
3.5
C
OSS
(pF)
1437
1121
994
880
761
617
501
462
370
354
PSMN0R9-25YLC
PSMN1R1-25YLC
PSMN1R2-25YLC
PSMN1R7-25YLC
PSMN1R9-25YLC
PSMN2R2-25YLC
PSMN2R9-25YLC
PSMN3R2-25YLC
PSMN3R7-25YLC
PSMN4R0-25YLC
25
25
25
25
25
25
25
25
25
25
4
NextPower MOSFETs - Visit us at www.nxp.com/mosfets
30 V NextPower types
Type
Voltage (V)
R
DS(on)
typ
V
GS
= 4.5 V (mΩ)
1.1
1.35
1.65
2.3
3.1
3.75
4.25
4.75
5.1
Q
G
(typ)
V
GS
= 4.5 V (nC)
50
38
30
26
18
14.2
14
11
9.6
Q
GD
(typ)
V
GS
= 4.5 V (nC)
14.6
11.6
8.6
8
5.5
4.1
4.2
3.5
2.85
C
OSS
(pF)
1210
977
860
651
549
432
380
316
288
PSMN1R0-30YLC
PSMN1R2-30YLC
PSMN1R5-30YLC
PSMN2R2-30YLC
PSMN2R6-30YLC
PSMN3R2-30YLC
PSMN3R7-30YLC
PSMN4R1-30YLC
PSMN4R5-30YLC
30
30
30
30
30
30
30
30
30
Benchmarking
Comparing NXP NextPower with NXP Trench 6 technology
Benchmark testing for NextPower types shows a 1% efficiency gain compared to equivalent Trench 6 types:
30 V NextPower types
Type
PSMN1R5-30YL
PSMN1R5-30YLC
PSMN4R0-30YL
PSMN4R5-30YLC
=&G$3H"
)
XYW
!
XYW
!
XYW
!
XYW
!
IJ0C&4E$F9
)
=K,LMN<=)
OKC$F9E
)
=K,LMN<=)
Uf!
R
DS(on)
typ
U\!
V
GS
= 4.5 V (mΩ)
f5f
1.8
!
f5\!
OKPC$F9E
)
=K,LMN<=)
V5f!
]!
8+,,C$F9E )
Voltage
U5X
(V)
!
30
] !
30
30
30
U5V
!
Q
G
(typ)
TVVY!
\VT!
V
GS
= 4.5 V (nC)
36
30
18
9.6
bgf !
U]] !
Q
GD
(typ)
V
GS
= 4.5 V (nC)
8.7
8.6
4.3
2.85
C
OSS
(pF)
1082
860
469
288
V5T
!
1.65
3.7
5.1
U5]!
U5]V
!
Test conditions
}
Input Voltage: 12 V
}
Output Voltage: 1.2 V
}
1 phase
}
Frequency: 500 KHz
}
Air flow: 200 LFM
Efficiency
NextPower: PSMN4R5-30YLC / PSMN1R5-30YLC
Trench 6: PSMN4R0-30YL / PSMN1R5-30YL
0
5
10
15
20
25
30
I
LOAD
(Amps)
NextPower MOSFETs - Visit us at www.nxp.com/mosfets
5
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