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SAC30

Description
500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
Categorysemiconductor    Discrete semiconductor   
File Size408KB,4 Pages
ManufacturerUN semiconductor
Websitehttp://www.unsemi.com.tw/
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500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC

Axial Lead Transient Voltage Suppressors (TVS)
SAC Series
Description
The SAC series is designed specifically to protect sensitive electronic
equipment from voltage transients induced by lightning and other transient
voltage events.
5.0 To 50 V
500W
Low Capacitance
Uni-directional
Features
u
u
u
u
u
u
Glass passivated chip
500W peak pulse power capability with a 10/1000µs waveform,
repetitive rate (duty cycle): 0.01%
Low leakage
Excellent clamping capability
Very fast response time
RoHS compliant
Applications
TVS devices are ideal for the protection of I/O interfaces, V
CC
bus and other
vulnerable circuits used in Telecom, Computer, Industrial and Consumer
electronic applications.
Maximum Ratings
(T
A
=25℃ unless otherwise noted)
Parameter
Symbol
P
PPM
I
PP
P
M(AV)
T
J
, T
STG
Value
500
See Next Table
3.0
-55 to +150
Unit
Watts
Amps
Watt
°C
Peak Pulse Power Dissipation with a 10/1000µs waveform
(1)
Peak Pulse Current with a 10/1000µs waveform.(Fig.2)
(1)
Power Dissipation on Infinite Heat Sink at T
L
=75°C (Fig.2)
Operating junction and Storage Temperature Range
Notes:
1. Non-repetitive current pulse , per Fig. 3 and derated above TA= 25°C per Fig. 2
Electrical Characteristics
(T
A
=25℃ unless otherwise noted)
Maximum
Reverse
Leakage I
R
@V
RWM
(μA)
300
300
300
100
50
5
5
5
5
5
5
5
5
5
5
Maximum
Clamping
Voltage
V
C
@I
PP
(V)
10.0
11.2
12.6
13.4
14.0
16.3
19.0
23.6
28.8
35.4
42.3
48.6
60.0
77.0
88.0
Maximum
Peak
Pulse
Current
I
PP
(A)
44.0
41.0
38.0
36.0
34.0
29.0
25.0
20.0
15.0
14.0
11.1
10.0
8.6
6.8
5.8
Maximum
Junction
Capacitance
@0V
(pF)
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
Working
Inverse
Blocking
Voltage
V
WIB
(V)
75
75
75
75
75
75
75
75
75
75
75
75
75
150
150
Inverse
Blocking
Leakage
Current
I
IB
@V
WIB
(mA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Peak
Inverse
Voltage
V
PIB
(V)
100
100
100
100
100
100
100
100
100
100
100
100
100
200
200
Part Number
Reverse
Stand-Off
Voltage
V
RWM
(V)
5.0
6.0
7.0
8.0
8.5
10.0
12.0
15.0
18.0
22.0
26.0
30.0
36.0
45.0
50.0
Breakdown
Voltage V
BR
@I
T
=1.0mA
(V)
MIN
SAC5.0
SAC6.0
SAC7.0
SAC8.0
SAC8.5
SAC10
SAC12
SAC15
SAC18
SAC22
SAC26
SAC30
SAC36
SAC45
SAC50
7.60
7.90
8.33
8.89
9.44
11.10
13.30
16.67
20.00
24.40
28.90
33.30
40.00
50.00
55.50
UN Semiconductor Co., Ltd.
Revision
October 18, 2013
www.unsemi.com.tw
1/4
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
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