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1S50

Description
1 A, 70 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size531KB,2 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
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1S50 Overview

1 A, 70 V, SILICON, SIGNAL DIODE

1S20 THRU 1SA0
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts
R-1
Forward Current - 1.0 Ampere
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Metal silicon junction,majority carrier conduction
Low power loss,high efficiency
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.102 (2.6)
0.091 (2.3)
DIA.
0.140(3.50)
0.114(2.90)
1.0 (25.4)
MIN.
MECHANICAL DATA
Case:
R-1 molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.007
ounce, 0.20 grams
0.025 (0.60)
0.021 (0.50)
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
1S
20
1S
30
1S
40
1S
50
1S
60
1S
70
1S
80
1S
90
1S
A0
UNITS
VOLTS
VOLTS
VOLTS
Amp
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
1.0
70
49
70
80
56
80
90
63
90
100
70
100
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
110
-65 to +125
0.55
40.0
0.70
0.5
10.0
80
50.0
-65 to +150
-65 to +150
0.85
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

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1S50 1S20 1S30 1S40 1S60 1S70 1S80 1S90 1SA0
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