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B330B

Description
3 A, 30 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size551KB,2 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
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B330B Overview

3 A, 30 V, SILICON, RECTIFIER DIODE

B320B THRU B3100B
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts
DO-214AA/SMB
Forward Current - 3.0 Amperes
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.087 (2.20)
0.071 (1.80)
0.155(3.94)
0.130(3.30)
0.180(4.57)
0.160(4.06)
0.012(0.305)
0.006(0.152)
MECHANICAL DATA
0.096(2.44)
0.084(2.13)
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.220(5.59)
0.205(5.21)
Case:
JEDEC DO-214AA molded plastic body
Terminals:
leads solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight
:0.003 ounce, 0.093 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
B320B B330B B340B B350B B360B B380B B3100B
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
40
28
40
50
35
50
3.0
60
42
60
80
56
80
100
70
100
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
500
0.55
100.0
0.70
0.5
20
300
55.0
-50 to +125
-50 to +150
-50 to +150
10
0.85
Amps
Volts
mA
pF
C/W
C
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas

B330B Related Products

B330B B320B B340B B350B B360B B380B B3100B
Description 3 A, 30 V, SILICON, RECTIFIER DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE 3 A, 40 V, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE 3 A, 60 V, SILICON, RECTIFIER DIODE 3 A, 80 V, SILICON, RECTIFIER DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE
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Index Files: 1601  2001  1588  1099  1172  33  41  32  23  24 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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