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SK835

Description
8 A, 60 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size798KB,3 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
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SK835 Overview

8 A, 60 V, SILICON, RECTIFIER DIODE

SK82 THRU SK810
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 Volts
Forward Current - 8.0 Amperes
DO-214AB/SMC
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.126 (3.20)
0.114 (2.90)
0.245(6.22)
0.220(5.59)
0.280(7.11)
0.260(6.60)
0.012(0.305)
0.006(0.152)
0.103(2.62)
0.079(2.06)
MECHANICAL DATA
0.008(0.203)MAX.
0.060(1.52)
0.030(0.76)
0.320(8.13)
0.305(7.75)
Case:
JEDEC DO-214AB molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.007
ounce, 0.25grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=95 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 8.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction temperature range
Storage temperature range
SYMBOLS
SK82
SK83
SK835
SK84
SK845
SK86
SK88
SK810
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
20
14
20
30
21
30
35
24.5
35
40
28
40
45
31.5
45
8.0
60
42
60
80
56
80
100
70
100
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
0.65
200.0
0.85
1
20
400
18.0
-50 to +150
-50 to +150
Amps
Volts
mA
pF
C/W
C
C
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2
”(5.0x5.0mm)
copper pad areas

SK835 Related Products

SK835 SK86 SK83 SK82 SK88 SK810 SK845
Description 8 A, 60 V, SILICON, RECTIFIER DIODE 8 A, 60 V, SILICON, RECTIFIER DIODE 8 A, 30 V, SILICON, RECTIFIER DIODE 8 A, 20 V, SILICON, RECTIFIER DIODE 8 A, 80 V, SILICON, RECTIFIER DIODE 8 A, 100 V, SILICON, RECTIFIER DIODE 8 A, 45 V, SILICON, RECTIFIER DIODE

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