1N4005 datasheet, PDF - EEWORLD Datasheet

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1N4005: Description1 A, 600 V, SILICON, SIGNAL DIODE, DO-41; Categorysemiconductor Discrete semiconductor; File Size60KB，2 Pages; ManufacturerTiger Electronic Co.,Ltd.; Websitehttp://www.tgselec.com/

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1N4005 Overview

1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

1N4005 Parametric

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	PLASTIC PACKAGE-2
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	round
Package Size	LONG FORM
Terminal form	Wire
terminal coating	NOT SPECIFIED
Terminal location	AXIAL
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	isolation
Diode component materials	silicon
Diode type	Signal diode
Maximum repetitive peak reverse voltage	600 V
Maximum average forward current	1 A

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TIGER ELECTRONIC CO.,LTD

1N4001

1.0 AMP SILICON RECTIFIERS

VOLTAGE RANGE

50 to 1000 Volts

THRU

1N4007

CURRENT

FEATURES

* Low forward voltage drop

* High current capability

* High reliability

* High surge current capability

1.0 Ampere

DO-41

.107(2.7)

.080(2.0)

DIA.

1.0(25.4)

MIN.

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-0 rate flame retardant

* Lead: Axial leads, solderable per MIL-STD-202,

method 208 guranteed

* Polarity: Color band denotes cathode end

* Mounting position: Any

* Weight: 0.34 grams

.205(5.2)

.166(4.2)

.034(.9)

.028(.7)

DIA.

1.0(25.4)

MIN.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.

Single phase half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

TYPE NUMBER

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Rectified Current

.375"(9.5mm) Lead Length at Ta=75 C

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

Maximum Instantaneous Forward Voltage at 1.0A

Maximum DC Reverse Current

Ta=25 C

at Rated DC Blocking Voltage

Ta=100 C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance RqJA (Note 2)

Operating and Storage Temperature Range T

, T

STG

NOTES:

1N4001

1N4002 1N4003 1N4004

1N4005 1N4006 1N4007

UNITS

100

200

140

200

400

280

400

1.0

5.0

-65

+175

600

420

600

800

560

800

1000

700

1000

C/W

1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.

1N4005 Related Products

	1N4005	1N4003	1N4007	1N4004	1N4002	1N4001	1N4006
Description	1 A, 600 V, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE, DO-41	1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41	1 A, 400 V, SILICON, SIGNAL DIODE, DO-41	1 A, 100 V, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE	1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
Number of terminals	2	2	2	2	2	2	2
Number of components	1	1	1	1	1	1	1
state	ACTIVE	TRANSFERRED	ACTIVE	ACTIVE	TRANSFERRED	ACTIVE	ACTIVE
packaging shape	round	round	round	round	round	round	ROUND
Package Size	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Terminal form	Wire	Wire	Wire	Wire	Wire	Wire	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Packaging Materials	Plastic/Epoxy	Glass	Plastic/Epoxy	UNSPECIFIED	Plastic/Epoxy	UNSPECIFIED	PLASTIC/EPOXY
structure	single	single	single	single	single	single	SINGLE
Shell connection	isolation	isolation	isolation	isolation	isolation	isolation	ISOLATED
Diode component materials	silicon	silicon	silicon	silicon	silicon	silicon	SILICON
Diode type	Signal diode	Signal diode	Signal diode	Signal diode	Signal diode	Signal diode	SIGNAL DIODE
Maximum average forward current	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Processing package description	PLASTIC PACKAGE-2	ALF-2, DO-41, 2 PIN	PLASTIC PACKAGE-2	CASE R-1, 2 PIN	-	MINIATURE PACKAGE-2	ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN
terminal coating	NOT SPECIFIED	-	-	-	tin lead	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V	-	1000 V	400 V	100 V	-	800 V

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