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1N4001

Description
1 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size60KB,2 Pages
ManufacturerTiger Electronic Co.,Ltd.
Websitehttp://www.tgselec.com/
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1N4001 Overview

1 A, SILICON, SIGNAL DIODE

1N4001 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionMINIATURE PACKAGE-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingNOT SPECIFIED
Terminal locationAXIAL
Packaging MaterialsUNSPECIFIED
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum average forward current1 A
TIGER ELECTRONIC CO.,LTD
1N4001
1.0 AMP SILICON RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
THRU
1N4007
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
1.0 Ampere
DO-41
.107(2.7)
.080(2.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.34 grams
.205(5.2)
.166(4.2)
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=75 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance RqJA (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
1N4001
1N4002 1N4003 1N4004
1N4005 1N4006 1N4007
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
1.0
5.0
50
15
50
-65
+175
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
A
A
pF
C/W
C
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance from Junction to Ambient .375" (9.5mm) lead length.

1N4001 Related Products

1N4001 1N4005 1N4003 1N4007 1N4004 1N4002 1N4006
Description 1 A, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
Number of terminals 2 2 2 2 2 2 2
Number of components 1 1 1 1 1 1 1
state ACTIVE ACTIVE TRANSFERRED ACTIVE ACTIVE TRANSFERRED ACTIVE
packaging shape round round round round round round ROUND
Package Size LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Terminal form Wire Wire Wire Wire Wire Wire WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Packaging Materials UNSPECIFIED Plastic/Epoxy Glass Plastic/Epoxy UNSPECIFIED Plastic/Epoxy PLASTIC/EPOXY
structure single single single single single single SINGLE
Shell connection isolation isolation isolation isolation isolation isolation ISOLATED
Diode component materials silicon silicon silicon silicon silicon silicon SILICON
Diode type Signal diode Signal diode Signal diode Signal diode Signal diode Signal diode SIGNAL DIODE
Maximum average forward current 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Processing package description MINIATURE PACKAGE-2 PLASTIC PACKAGE-2 ALF-2, DO-41, 2 PIN PLASTIC PACKAGE-2 CASE R-1, 2 PIN - ROHS COMPLIANT, PLASTIC, DO-204AL, 2 PIN
terminal coating NOT SPECIFIED NOT SPECIFIED - - - tin lead NOT SPECIFIED
Maximum repetitive peak reverse voltage - 600 V - 1000 V 400 V 100 V 800 V

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