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1N4449

Description
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size263KB,6 Pages
ManufacturerETC1
Download Datasheet Parametric View All

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1N4449 Overview

0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35

1N4449 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin lead
Terminal locationAXIAL
Packaging MaterialsGlass
structuresingle
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit0.5000 W
Diode typeSignal diode
Maximum reverse recovery time0.0040 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current0.1500 A

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