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3N65G-TM3-R

Description
3A, 650V N-CHANNEL POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size397KB,8 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Environmental Compliance
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3N65G-TM3-R Overview

3A, 650V N-CHANNEL POWER MOSFET

3N65G-TM3-R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerUNISONIC TECHNOLOGIES CO.,LTD
Parts packaging codeTO-251
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)200 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage650 V
Maximum drain current (Abs) (ID)3 A
Maximum drain current (ID)3 A
Maximum drain-source on-resistance3.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)12 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
UNISONIC TECHNOLOGIES CO., LTD
3N65
3A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
3N65
is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
Power MOSFET
FEATURES
* R
DS(ON)
= 3.8Ω @V
GS
= 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N65L-TA3-T
3N65G-TA3-T
3N65L-TF1-T
3N65G-TF1-T
3N65L-TF3-T
3N65G-TF3-T
3N65L-TM3-R
3N65G-TM3-R
3N65L-TN3-R
3N65G-TN3-R
3N65L-TN3-T
3N65G-TN3-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tape Reel
Tube
Note:
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-590.B

3N65G-TM3-R Related Products

3N65G-TM3-R 3N65L-TN3-T 3N65L-TM3-R 3N65G-TN3-T 3N65
Description 3A, 650V N-CHANNEL POWER MOSFET 3A, 650V N-CHANNEL POWER MOSFET 3A, 650V N-CHANNEL POWER MOSFET 3A, 650V N-CHANNEL POWER MOSFET 3A, 650V N-CHANNEL POWER MOSFET
Is it Rohs certified? conform to conform to conform to conform to -
Maker UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD -
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 -
Reach Compliance Code compli compli compli compli -
Avalanche Energy Efficiency Rating (Eas) 200 mJ 200 mJ 200 mJ 200 mJ -
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE -
Minimum drain-source breakdown voltage 650 V 650 V 650 V 650 V -
Maximum drain current (Abs) (ID) 3 A 3 A 3 A 3 A -
Maximum drain current (ID) 3 A 3 A 3 A 3 A -
Maximum drain-source on-resistance 3.6 Ω 3.8 Ω 3.6 Ω 3.8 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-251 TO-252 TO-251 TO-252 -
JESD-30 code R-PSIP-T3 R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 -
Number of components 1 1 1 1 -
Number of terminals 3 2 3 2 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR -
Package form IN-LINE SMALL OUTLINE IN-LINE SMALL OUTLINE -
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 50 W 50 W 50 W 50 W -
Maximum pulsed drain current (IDM) 12 A 12 A 12 A 12 A -
surface mount NO YES NO YES -
Terminal form THROUGH-HOLE GULL WING THROUGH-HOLE GULL WING -
Terminal location SINGLE SINGLE SINGLE SINGLE -
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING -
Transistor component materials SILICON SILICON SILICON SILICON -
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