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3N65

Description
3A, 650V N-CHANNEL POWER MOSFET
File Size397KB,8 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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3N65 Overview

3A, 650V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
3N65
3A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
3N65
is a high voltage and high current power
MOSFET designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and high
rugged avalanche characteristics. This power MOSFET is usually
used in high speed switching applications at power supplies, PWM
motor controls, high efficient DC to DC converters and bridge
circuits.
Power MOSFET
FEATURES
* R
DS(ON)
= 3.8Ω @V
GS
= 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance ( C
RSS
= typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
3N65L-TA3-T
3N65G-TA3-T
3N65L-TF1-T
3N65G-TF1-T
3N65L-TF3-T
3N65G-TF3-T
3N65L-TM3-R
3N65G-TM3-R
3N65L-TN3-R
3N65G-TN3-R
3N65L-TN3-T
3N65G-TN3-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
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Tape Reel
Tube
Note:
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-590.B

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3N65 3N65L-TN3-T 3N65L-TM3-R 3N65G-TN3-T 3N65G-TM3-R
Description 3A, 650V N-CHANNEL POWER MOSFET 3A, 650V N-CHANNEL POWER MOSFET 3A, 650V N-CHANNEL POWER MOSFET 3A, 650V N-CHANNEL POWER MOSFET 3A, 650V N-CHANNEL POWER MOSFET
Is it Rohs certified? - conform to conform to conform to conform to
Maker - UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD UNISONIC TECHNOLOGIES CO.,LTD
package instruction - SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Reach Compliance Code - compli compli compli compli
Avalanche Energy Efficiency Rating (Eas) - 200 mJ 200 mJ 200 mJ 200 mJ
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 650 V 650 V 650 V 650 V
Maximum drain current (Abs) (ID) - 3 A 3 A 3 A 3 A
Maximum drain current (ID) - 3 A 3 A 3 A 3 A
Maximum drain-source on-resistance - 3.8 Ω 3.6 Ω 3.8 Ω 3.6 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-252 TO-251 TO-252 TO-251
JESD-30 code - R-PSSO-G2 R-PSIP-T3 R-PSSO-G2 R-PSIP-T3
Number of components - 1 1 1 1
Number of terminals - 2 3 2 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE IN-LINE SMALL OUTLINE IN-LINE
Polarity/channel type - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 50 W 50 W 50 W 50 W
Maximum pulsed drain current (IDM) - 12 A 12 A 12 A 12 A
surface mount - YES NO YES NO
Terminal form - GULL WING THROUGH-HOLE GULL WING THROUGH-HOLE
Terminal location - SINGLE SINGLE SINGLE SINGLE
transistor applications - SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - SILICON SILICON SILICON SILICON
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