3N165 datasheet, PDF - EEWORLD Datasheet

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3N165: Description50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99; Categorysemiconductor Discrete semiconductor; File Size119KB，1 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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3N165 Overview

50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99

3N165 Parametric

Parameter Name	Attribute value
Number of terminals	6
Minimum breakdown voltage	40 V
Processing package description	HERMETIC SEALED PACKAGE-6
state	ACTIVE
packaging shape	round
Package Size	cylindrical
Terminal form	Wire
terminal coating	NOT SPECIFIED
Terminal location	BOTTOM
Packaging Materials	Metal
structure	COMMON source, 2 ELEMENTS
Number of components	2
transistor applications	amplifier
Transistor component materials	silicon
Maximum ambient power consumption	0.5250 W
Channel type	P channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT
Transistor type	Universal small signal
Maximum leakage current	0.0500 A
feedback capacitor	0.7000 pF
Maximum drain on-resistance	300 ohm

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3N165 Related Products

	3N165	UC1764	3N173	3N172	3N166	3N164	3N163	UC2766
Description	50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99	50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99	50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99	50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99	50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99	50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99	40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72	50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99
Number of terminals	6	6	6	4	6	4	4	6
Terminal form	Wire	Wire	Wire	WIRE	Wire	WIRE	WIRE	Wire
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Number of components	2	2	2	1	2	1	1	2
Transistor component materials	silicon	silicon	silicon	SILICON	silicon	SILICON	SILICON	silicon
Minimum breakdown voltage	40 V	40 V	40 V	-	40 V	-	-	40 V
Processing package description	HERMETIC SEALED PACKAGE-6	HERMETIC SEALED PACKAGE-6	HERMETIC SEALED PACKAGE-6	-	HERMETIC SEALED PACKAGE-6	-	-	HERMETIC SEALED PACKAGE-6
state	ACTIVE	ACTIVE	ACTIVE	-	ACTIVE	-	-	ACTIVE
packaging shape	round	round	round	-	round	-	-	round
Package Size	cylindrical	cylindrical	cylindrical	-	cylindrical	-	-	cylindrical
terminal coating	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	-	-	NOT SPECIFIED
Packaging Materials	Metal	Metal	Metal	-	Metal	-	-	Metal
structure	COMMON source, 2 ELEMENTS	COMMON source, 2 ELEMENTS	COMMON source, 2 ELEMENTS	-	COMMON source, 2 ELEMENTS	-	-	COMMON source, 2 ELEMENTS
transistor applications	amplifier	amplifier	amplifier	-	amplifier	-	-	amplifier
Maximum ambient power consumption	0.5250 W	0.5250 W	0.5250 W	-	0.5250 W	-	-	0.5250 W
Channel type	P channel	P channel	P channel	-	P channel	-	-	P channel
field effect transistor technology	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	-	Metal-OXIDE SEMICONDUCTOR	-	-	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	-	ENHANCEMENT	-	-	ENHANCEMENT
Transistor type	Universal small signal	Universal small signal	Universal small signal	-	Universal small signal	-	-	Universal small signal
Maximum leakage current	0.0500 A	0.0500 A	0.0500 A	-	0.0500 A	-	-	0.0500 A
feedback capacitor	0.7000 pF	0.7000 pF	0.7000 pF	-	0.7000 pF	-	-	0.7000 pF
Maximum drain on-resistance	300 ohm	300 ohm	300 ohm	-	300 ohm	-	-	300 ohm

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