3N163 datasheet, PDF - EEWORLD Datasheet

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3N163: Description40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72; CategoryDiscrete semiconductor The transistor; File Size119KB，1 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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3N163 Overview

40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72

3N163 Parametric

Parameter Name	Attribute value
Maker	New Jersey Semiconductor
package instruction	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	unknow
Configuration	SINGLE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (ID)	0.05 A
Maximum drain-source on-resistance	250 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.7 pF
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	P-CHANNEL
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Base Number Matches	1

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3N163 Related Products

	3N163	UC1764	3N173	3N172	3N166	3N165	3N164	UC2766
Description	40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-72	50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99	50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99	50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99	50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99	50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99	50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99	50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-99
Number of components	1	2	2	1	2	2	1	2
Number of terminals	4	6	6	4	6	6	4	6
Terminal form	WIRE	Wire	Wire	WIRE	Wire	Wire	WIRE	Wire
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	silicon	silicon	SILICON	silicon	silicon	SILICON	silicon
Minimum breakdown voltage	-	40 V	40 V	-	40 V	40 V	-	40 V
Processing package description	-	HERMETIC SEALED PACKAGE-6	HERMETIC SEALED PACKAGE-6	-	HERMETIC SEALED PACKAGE-6	HERMETIC SEALED PACKAGE-6	-	HERMETIC SEALED PACKAGE-6
state	-	ACTIVE	ACTIVE	-	ACTIVE	ACTIVE	-	ACTIVE
packaging shape	-	round	round	-	round	round	-	round
Package Size	-	cylindrical	cylindrical	-	cylindrical	cylindrical	-	cylindrical
terminal coating	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
Packaging Materials	-	Metal	Metal	-	Metal	Metal	-	Metal
structure	-	COMMON source, 2 ELEMENTS	COMMON source, 2 ELEMENTS	-	COMMON source, 2 ELEMENTS	COMMON source, 2 ELEMENTS	-	COMMON source, 2 ELEMENTS
transistor applications	-	amplifier	amplifier	-	amplifier	amplifier	-	amplifier
Maximum ambient power consumption	-	0.5250 W	0.5250 W	-	0.5250 W	0.5250 W	-	0.5250 W
Channel type	-	P channel	P channel	-	P channel	P channel	-	P channel
field effect transistor technology	-	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	-	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	-	Metal-OXIDE SEMICONDUCTOR
operating mode	-	ENHANCEMENT	ENHANCEMENT	-	ENHANCEMENT	ENHANCEMENT	-	ENHANCEMENT
Transistor type	-	Universal small signal	Universal small signal	-	Universal small signal	Universal small signal	-	Universal small signal
Maximum leakage current	-	0.0500 A	0.0500 A	-	0.0500 A	0.0500 A	-	0.0500 A
feedback capacitor	-	0.7000 pF	0.7000 pF	-	0.7000 pF	0.7000 pF	-	0.7000 pF
Maximum drain on-resistance	-	300 ohm	300 ohm	-	300 ohm	300 ohm	-	300 ohm

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