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BA1282

Description
MIXER DIODE
CategoryDiscrete semiconductor    diode   
File Size153KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

BA1282 Overview

MIXER DIODE

BA1282 Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
Number of components1
Maximum operating temperature150 °C
Maximum output current0.1 A
Maximum repetitive peak reverse voltage35 V
surface mountYES
Base Number Matches1
BA1282, BA1283
Vishay Semiconductors
Band Switching Diodes
FEATURES
9612315
MECHANICAL DATA
Case:
MicroMELF
Weight:
approx. 12 mg
Cathode band color:
black
Packaging codes/options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
Silicon planar diode
Saving space
Hermetic sealed parts
Fits onto SOD-323 footprints
Electrical data identical with the devices BA682,
BA683, BA982, BA983
Low dynamic forward resistance
Low diode capacitance
High reverse impedance
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
in
APPLICATIONS
• Band switching in VHF-tuners
PARTS TABLE
PART
BA1282
BA1283
TYPE DIFFERENTIATION
V
R
= 35 V, r
f
at I
F
3 mA = max. 0.7
Ω
V
R
= 35 V, r
f
at I
F
3 mA = max. 1.2
Ω
ORDERING CODE
BA1282-TR3 or BA1282-TR
BA1283-TR3 or BA1283-TR
REMARKS
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
Reverse voltage
Forward continuous current
Note
(1)
T
amb
= 25 °C, unless otherwise specified
TEST CONDITIONS
SYMBOL
V
R
I
F
VALUE
35
100
UNIT
V
mA
THERMAL CHARACTERISTICS
(1)
PARAMETER
Junction to ambient air
Junction temperature
Storage temperature range
(1)
TEST CONDITION
Mounted on epoxy-glass hard tissue, fig. 1
35 µm copper clad, 0.9 mm
2
copper area per electrode
SYMBOL
R
thJA
T
j
T
stg
VALUE
500
150
- 55 to + 150
UNIT
K/W
°C
°C
Note
T
amb
= 25 °C, unless otherwise specified
ELECTRICAL CHARACTERISTICS
(1)
PARAMETER
Forward voltage
Reverse current
Diode capacitance
TEST CONDITION
I
F
= 100 mA
V
R
= 20 V
f = 100 MHz, V
R
= 1 V
f = 100 MHz, V
R
= 3 V
f = 200 MHz, I
F
= 3 mA
Dynamic forward resistance
f = 200 MHz, I
F
= 10 mA
(1)
PART
SYMBOL
V
F
I
R
C
D1
MIN.
TYP.
MAX.
1000
50
1.5
1.25
1.2
0.7
1.2
0.5
0.9
UNIT
mV
nA
pF
pF
pF
Ω
Ω
Ω
Ω
BA1282
BA1283
BA1282
BA1283
BA1282
BA1283
C
D2
C
D2
r
f1
r
f1
r
f2
r
f2
Note
T
amb
= 25 °C, unless otherwise specified
Document Number: 85525
Rev. 1.9, 05-Aug-10
For technical questions within your region, please contact one of the following:
Diodes Americas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1

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BA1282 BA1282_10
Description MIXER DIODE MIXER DIODE

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