BA1282, BA1283
Vishay Semiconductors
Band Switching Diodes
FEATURES
•
•
•
•
•
9612315
MECHANICAL DATA
Case:
MicroMELF
Weight:
approx. 12 mg
Cathode band color:
black
Packaging codes/options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
•
•
•
•
•
•
Silicon planar diode
Saving space
Hermetic sealed parts
Fits onto SOD-323 footprints
Electrical data identical with the devices BA682,
BA683, BA982, BA983
Low dynamic forward resistance
Low diode capacitance
High reverse impedance
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21 definition
in
APPLICATIONS
• Band switching in VHF-tuners
PARTS TABLE
PART
BA1282
BA1283
TYPE DIFFERENTIATION
V
R
= 35 V, r
f
at I
F
3 mA = max. 0.7
Ω
V
R
= 35 V, r
f
at I
F
3 mA = max. 1.2
Ω
ORDERING CODE
BA1282-TR3 or BA1282-TR
BA1283-TR3 or BA1283-TR
REMARKS
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER
Reverse voltage
Forward continuous current
Note
(1)
T
amb
= 25 °C, unless otherwise specified
TEST CONDITIONS
SYMBOL
V
R
I
F
VALUE
35
100
UNIT
V
mA
THERMAL CHARACTERISTICS
(1)
PARAMETER
Junction to ambient air
Junction temperature
Storage temperature range
(1)
TEST CONDITION
Mounted on epoxy-glass hard tissue, fig. 1
35 µm copper clad, 0.9 mm
2
copper area per electrode
SYMBOL
R
thJA
T
j
T
stg
VALUE
500
150
- 55 to + 150
UNIT
K/W
°C
°C
Note
T
amb
= 25 °C, unless otherwise specified
ELECTRICAL CHARACTERISTICS
(1)
PARAMETER
Forward voltage
Reverse current
Diode capacitance
TEST CONDITION
I
F
= 100 mA
V
R
= 20 V
f = 100 MHz, V
R
= 1 V
f = 100 MHz, V
R
= 3 V
f = 200 MHz, I
F
= 3 mA
Dynamic forward resistance
f = 200 MHz, I
F
= 10 mA
(1)
PART
SYMBOL
V
F
I
R
C
D1
MIN.
TYP.
MAX.
1000
50
1.5
1.25
1.2
0.7
1.2
0.5
0.9
UNIT
mV
nA
pF
pF
pF
Ω
Ω
Ω
Ω
BA1282
BA1283
BA1282
BA1283
BA1282
BA1283
C
D2
C
D2
r
f1
r
f1
r
f2
r
f2
Note
T
amb
= 25 °C, unless otherwise specified
Document Number: 85525
Rev. 1.9, 05-Aug-10
For technical questions within your region, please contact one of the following:
Diodes Americas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
BA1282, BA1283
Vishay Semiconductors
Band Switching Diodes
TYPICAL CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
r
f
- Differential Forward Resistance (Ω)
100
f = 200 MHz
T
j
= 25 °C
10
BA1283
1
BA1282
0.1
0.1
1
10
100
94 9076
I
F
- Forward Current (mA)
Fig. 1 - Dynamic Forward Resistance vs. Forward Current
3.0
C
D
- Diode Capacitance (pF)
2.5
2.0
1.5
f = 200 MHz
T
j
= 25 °C
BA1282
1.0
0.5
0
0.1
1
10
100
BA1283
94 9077
V
R
- Reverse
Voltage
(V)
Fig. 2 - Diode Capacitance vs. Reverse Voltage
0.71
0.152
1.3
1.27
25
0.355
10
2.5
95 10329
24
Fig. 3 - Board for R
thJA
Definition (in mm)
Document Number: 85525
Rev. 1.9, 05-Aug-10
For technical questions within your region, please contact one of the following:
Diodes Americas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
9.9
www.vishay.com
2
BA1282, BA1283
Band Switching Diodes
Vishay Semiconductors
PACKAGE DIMENSIONS
in millimeters (inches):
MicroMELF
Cathode indification
1 (0.039)
surface plan
surface plan
1.2 (0.047)
1.1 (0.043)
<
1.
35
gl
(0
as
.0
s
53
)
*
2 (0.079)
1.8 (0.071)
0.25 (0.010)
0.15 (0.006)
> R2.5 (0.098)
glass
*
The gap
between
plug and glass can
be
either on cathode or anode side
Foot print recommendation:
Reflow soldering
2.4 (0.094)
0.8 (0.031)
0.8 (0.031)
0.9 (0.035)
Wave
soldering
2.8 (0.110)
0.9 (0.035)
1.2 (0.047)
0.8 (0.031)
1 (0.039)
Created - Date: 26.July.1996
Rev. 13 - Date: 07.June.2006
Document no.:6.560-5007.01-4
96 12072
Document Number: 85525
Rev. 1.9, 05-Aug-10
For technical questions within your region, please contact one of the following:
Diodes Americas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1.4 (0.055)
0.6 (0.024)
www.vishay.com
3
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Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1