The BCY70 - BCY79 – BCY72 are PNP transistors mounted in TO-18 metal.
General purpose industrial applications.
Low current and low voltage.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
Ratings
Collector-Emitter Voltage (I
B
=0)
BCY70
BCY71
BCY72
BCY70
BCY71
BCY72
Value
-40
-45
-25
-50
-45
-25
-5
-200
-200
-100
390
200
-65 to +150
-65 to +150
Unit
V
V
CEB
V
EBO
I
C
I
CM
I
BM
P
D
T
J
T
Stg
T
amb
Collector-Emitter Voltage (I
E
=0)
Emitter-Base Voltage (I
C
=0)
Collector Current
Peak Collector Current
Peak Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature range
Operating ambient Temperature
V
V
mA
mA
mA
mW
°C
°C
°C
@ T
amb
= 25°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-a
R
thJ-c
Ratings
Thermal Resistance Junction-ambient
Thermal Resistance, Junction-case
Value
500
150
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/4
PNP BCY70 – BCY71 – BCY72
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
I
CES
Ratings
Collector Cutoff
Current
Test Condition(s)
V
CB
= -20 V, V
BE
= 0 V
V
CB
= -50 V
V
BE
= 0 V,T
j
= 150 °C
V
CB
= -45 V
V
BE
= 0V,T
j
= 150 °C
V
CB
= -25 V
V
BE
= 0 V,T
j
= 150 °C
V
BE
= -5.0 V, I
C
= 0
BCY70
BCY71
BCY72
BCY70
BCY71
BCY72
BCY70
BCY71
BCY72
BCY70
BCY71
BCY72
BCY70
BCY71
BCY72
BCY70
BCY71
BCY72
BCY70
BCY71
BCY78
Min
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
Max
-10
-100
-100
-0.5
-10
-10
-500
Unit
nA
I
CES
Collector Cutoff
Current
µA
I
EBO
Emitter Cutoff
Current
nA
I
C
= -10 mA, I
B
= -1 mA
V
CE(SAT)
Collector-Emitter
saturation Voltage
I
C
= -50 mA, I
B
= -5 mA
-
-
-0.25
-
-
-0.5
V
I
C
= -10 mA, I
B
= -1 mA
V
BE(SAT)
Base-Emitter
Saturation Voltage
I
C
= -50 mA, I
B
= -5 mA
BCY70
Min
-0.6
-
-0.9
-
-
-1.2
BCY71
Min
Max
BCY72
Unit
Max
Min
Max
h
FE
DC Current Gain
I
C
= -0.1mA
V
CE
= -1 V
I
C
= -1 mA
V
CE
= -1 V
I
C
= -10 mA
V
CE
= -1 V
I
C
= -50 mA
V
CE
= -1 V
40
45
50
15
-
-
-
-
80
90
100
15
-
-
40
-
-
-
-
-
600
-
50
-
16/11/2012
COMSET SEMICONDUCTORS
2/4
PNP BCY70 – BCY71 – BCY72
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
Symbol
h
fe
Ratings
Small-Signal Current
Gain
Test Condition(s)
I
C
= -1 mA, V
C E
= -10 V
f = 1kHz
I
C
= -0.1 mA, V
CE
= -20 V
f = 10.7 MHz
I
C
= -10 mA, V
CE
= -20 V
f = 100 MHz
I
C
= -0.1 mA, V
CE
= -5 V
f = 10 to 10 kHz
Min
100
15
250
200
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
400
-
-
-
2
6
35
35
350
Unit
-
BCY71
only
BCY71
BCY70
BCY71
BCY72
BCY71
BCY70
BCY72
BCY70
BCY72
BCY70
BCY72
BCY70
BCY72
BCY70
BCY72
BCY70
BCY72
BCY70
BCY72
BCY70
BCY71
BCY72
BCY70
BCY71
BCY72
f
T
Transition frequency
MHz
NF
t
d
t
r
t
s
t
f
t
on
t
off
C
C
Noise Figure
Delay time
Rise time
Storage time
Fall time
Turn on time
Turn off time
Collector-Base
capacitance
Emitter-Base
capacitance
dB
R
g
= 2 kΩ
I
Con
= -10 mA
I
Bon
= -I
Boff
= -1mA
V
EE
= 3 V
ns
80
65
420
8
pF
I
E
= 0 ,V
CB
= -10 V
f = 1MHz
I
C
= 0 ,V
EB
= -1 V
f = 1MHz
C
E
-
-
8
pF
16/11/2012
COMSET SEMICONDUCTORS
3/4
PNP BCY70 – BCY71 – BCY72
ECHANICAL DATA CASE TO-18 (PNP)
DIMENSIONS (mm)
min
A
B
C
D
E
F
G
H
I
L
Pin 1 :
Pin 2 :
Pin 3 :
Case :
12.7
-
0.9
-
-
-
2.54
-
-
45°
max
-
0.49
-
5.3
4.9
5.8
-
1.2
1.16
-
emitter
base
Collector
Collector
Revised Ocobert 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of
such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice.
Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does
Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including
without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support
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