The BDY57 and BDY58 are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
TOT
T
J TS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
@ TC = 25°
Junction Temperature Storage Temperature
Ratings
BDY57
BDY58
BDY57
BDY58
Value
80
125
120
160
10
25
6
175
-65 to +200
Unit
V
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1
Unit
°C/W
09/11/2012
COMSET SEMICONDUCTORS
1|3
NPN BDY57 – BDY58
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO(SUS)
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CER
I
EBO
V
CE(SAT)
Ratings
Collector-Emitter
Breakdown Voltage (*)
Collector-Base
Breakdown Voltage (*)
Emitter-Base Breakdown
Voltage (*)
Collector-Base Cutoff
Current
Collector-Emitter Cutoff
Current
Emitter-Base Cutoff
Current
Collector-Emitter
saturation Voltage (*)
Test Condition(s)
I
C
=100 mA, I
B
=0
I
C
=5.0mA, I
E
=0
I
E
=5.0 A, I
C
=0
V
CB
=120 V, I
E
=0 V
V
CE
=80 V, R
BE
=10
T
CASE
=100°C
V
EB
=10 V, I
C
=0 V
I
C
=10 A, I
B
=1.0 A
V
CE
=4 V, I
C
=10 A
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
Min
80
125
120
160
-
-
-
-
-
-
20
-
10
10
-
-
Typ
-
-
-
-
0.5
-
-
-
0.25
0.5
-
15
-
30
0.25
1
Max Unit
-
-
-
-
1.4
1.0
0.5
10
0.5
1.4
60
-
-
-
1
2
MHz
µs
µs
V
V
V
V
mA
mA
mA
V
h
21E
Static Forward Current
transfer ratio (*)
V
CE
=4 V, I
C
=20 A
V
CE
=4 V, I
C
=10 A
T
CASE
=-30°C
V
CE
=15 V, I
C
=1.0 A
f=10 MHz
I
C
=15 A, I
B
=1.5 A
I
C
=15 A, I
B1
=1.5 A
I
B2
=-1.5 A
f
T
t
d + tr
t
s + tf
Transition Frequency
Turn-on time
Turn-off time
(*) Pulse Width ≈ 300 µs, Duty Cycle
∠
2.0%
09/11/2012
COMSET SEMICONDUCTORS
2|3
NPN BDY57 – BDY58
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
A
B
C
D
E
G
N
P
R
U
V
11
0.97
1.5
8.32
19
10.70
16.50
25
3.84
38.50
29.90
typ
-
-
-
-
-
-
-
-
-
-
-
max
13.10
1.15
1.65
8.92
22
11.1
17.20
27,20
4.21
40.13
30.40
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised October 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use
of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without
notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor
does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability,
including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in
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