BD139 datasheet, PDF - EEWORLD Datasheet

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BD139: Description1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126; Categorysemiconductor Discrete semiconductor; File Size50KB，1 Pages; ManufacturerTiger Electronic Co.,Ltd.; Websitehttp://www.tgselec.com/

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BD139 Overview

1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126

BD139 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	1.5 A
Maximum Collector-Emitter Voltage	80 V
Processing package description	TO-126, 3 PIN
state	ACTIVE
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	tin lead
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	single
Shell connection	COLLECTOR
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	1.25 W
Transistor type	universal power supply
Minimum DC amplification factor	25
Rated crossover frequency	190 MHz

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TIGER ELECTRONIC CO.,LTD

Product specification

Complementary Silicon Power Ttransistors

BD139 / BD140

DESCRIPTION

It is intented for use in power

amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Total Dissipation at

Max. Operating Junction Temperature

O

l

V

CBO

V

CEO

V

EBO

I

C

I

B

P

tot

T

j

T

stg

Value

80

5

1.5

0.5

12.5

150

-55~150

Unit

V

A

W

o

C

Storage Temperature

TO-126

ELECTRICAL CHARACTERISTICS ( Ta = 25

O

C)

Parameter

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Sustaining Voltage

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Symbol

Test Conditions

V

CB

=80V, I

E

=0

V

EB

=5V, I

C

=0

I

C

=30mA, I

B

=0

V

CE

=2V, I

C

=0.5A

V

CE

=2V, I

C

=150mA

Min.

—

80

25

40

—

3

Typ.

—

Max.

10

—

250

0.5

1.0

—

V

MHz

Unit

uA

V

I

CEO

I

EBO

V

CEO

h

FE(1)

h

FE(2)

V

CE(sat)

I

C

=0.5A,I

B

=50mA

V

BE(sat)

V

CE

=2V,I

C

=0.5A

f

T

V

CE

=10V,I

C

=500mA

BD139 Related Products

	BD139	BD140
Description	1.5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	1.5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-225AA
Number of terminals	3	3
Transistor polarity	NPN	PNP
Maximum collector current	1.5 A	1.5 A
Maximum Collector-Emitter Voltage	80 V	80 V
Processing package description	TO-126, 3 PIN	PLASTIC, CASE 77-09, 3 PIN
state	ACTIVE	ACTIVE
packaging shape	Rectangle	RECTANGULAR
Package Size	Flange mounting	FLANGE MOUNT
Terminal form	THROUGH-hole	THROUGH-HOLE
terminal coating	tin lead	TIN LEAD
Terminal location	single	SINGLE
Packaging Materials	Plastic/Epoxy	PLASTIC/EPOXY
structure	single	SINGLE
Number of components	1	1
transistor applications	switch	AMPLIFIER
Transistor component materials	silicon	SILICON
Maximum ambient power consumption	1.25 W	1.25 W
Transistor type	universal power supply	GENERAL PURPOSE POWER
Minimum DC amplification factor	25	25

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