They are silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec
TO-218 plastic package.
They are intended for use in power linear and switching applications.
The complementary are BDW84, BDW84A, BDW84B, BDW84C, BDW84D
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
Value
45
60
80
100
120
45
60
80
100
120
5
15
0.5
150
3.5
-65 to +150
-65 to +150
Unit
V
CEO
Collector-Emitter Voltage
I
B
= 0
V
V
CBO
Collector- Emitter Voltage
I
E
= 0
I
C
= 0
V
V
EBO
I
C
I
B
P
t
T
J
T
Stg
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
A
A
W
°C
°C
25°C case temperatur
25°C free aire temperatur
THERMAL CHARACTERISTICS
Symbol
R
thJC
R
thJA
Ratings
Value
0.83
35.7
Unit
°C/W
Junction to Case Thermal Resistance
Junction to Free Air Thermal Resistance
23/10/2012
COMSET SEMICONDUCTORS
1|3
NPN BDW83, BDW83A, BDW83B,
BDW83C, BDW83D,
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
BDW83
BDW83A
I
C
=30 mA
BDW83B
I
B
=0
BDW83C
BDW83D
BDW83
I
B
=0, V
CE
=30 V
I
B
=0, V
CE
=30 V
BDW83A
I
B
=0, V
CE
=40 V
BDW83B
I
B
=0, V
CE
=50 V
BDW83C
I
B
=0, V
CE
=60 V
BDW83D
I
E
= 0, V
CB
=45 V
BDW83
I
E
= 0, V
CB
=60 V
BDW83A
I
E
= 0, V
CB
=80 V
BDW83B
I
E
= 0, V
CB
=100 V BDW83C
I
E
= 0, V
CB
=120 V BDW83D
I
E
= 0, V
CB
=45 V
BDW83
T
case
= 150°C
I
E
= 0, V
CB
=60 V
BDW83A
T
case
= 150°C
I
E
= 0, V
CB
=80 V
BDW83B
T
case
= 150°C
I
E
= 0, V
CB
=100 V
BDW83C
T
case
= 150°C
I
E
= 0, V
CB
=120 V
BDW83D
T
case
= 150°C
V
EB
=5.0 V, I
C
=0
I
C
=6 A , V
CE
=3.0 V
I
C
=15 A , V
CE
=3.0 V
I
C
=6 A , I
B
=12 mA
I
C
=15 A , I
B
=150 mA
I
C
=6 A , I
B
=3 A
I
E
= 15 A , I
E
= 0
IC = 10 A,
IB1 =-IB2=40 mA
RL=3Ω; VBE(off) = -4.2V
Duty Cycle≤2%
Min
45
60
80
100
120
-
Typ
-
-
-
-
-
-
Max
-
-
-
-
-
1
Unit
V
CEO(SUS)
Collector-Emitter Sustaining
Voltage (*)
V
I
CEO
Collector Cutoff Current
mA
-
-
0.5
I
CBO
Collector Cutoff Current
mA
-
-
5
I
EBO
h
FE
V
CE(SAT)
V
BE(on)
V
EC
t
on
t
off
Emitter Cutoff Current
DC Current Gain (*)
Collector-Emitter saturation
Voltage (1)
Base-Emitter Voltage (*)
Parallel Diode Forward
Voltage
Turn-on time
Turn-off time
-
750
100
-
-
-
-
-
-
-
-
-
-
-
-
-
0.9
7
2
20 K
-
2.5
4
2.5
3.5
-
-
mA
-
V
V
µs
(*) Pulse Duration = 300
µs,
Duty Cycle <= 2%
23/10/2012
COMSET SEMICONDUCTORS
2|3
NPN BDW83, BDW83A, BDW83B,
BDW83C, BDW83D,
MECHANICAL DATA CASE TO3PN Non Isolated Plastic Package
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
R
S
T
15.20
1.90
4.60
3.10
Max.
1600
2.10
5.00
3.30
9.60
2.00
0.55
1.40
5.55
20.20
1.25
2.00
3.00
4.00
4.00
1.80
5.20
0.35
5.35
20.00
19.60
0.95
4.80
Pin 1 :
Pin 2 :
Pin 3 :
Base
Collector
Emitter
The centre pin is in electrical
contact with the mounting tab.
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
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