BFU630F
NPN wideband silicon RF transistor
Rev. 1 — 15 December 2010
Product data sheet
1. Product profile
1.1 General description
NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin
dual-emitter SOT343F package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A
or
equivalent standards.
1.2 Features and benefits
Low noise high gain microwave transistor
Noise figure (NF) = 0.85 dB at 2.4 GHz
High maximum stable gain 26 dB at 1.8 GHz
40 GHz f
T
silicon technology
1.3 Applications
Low noise amplifiers for microwave communications systems
WLAN and CDMA applications
Analog/digital cordless applications
Ku band oscillators DRO’s
LNB
RKE
AMR
GPS
ZigBee
LTE, cellular, UMTS
FM radio
Mobile TV
Bluetooth
NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
1.4 Quick reference data
Table 1.
V
CBO
V
CEO
V
EBO
I
C
P
tot
h
FE
C
CBS
f
T
G
p(max)
NF
P
L(1dB)
Quick reference data
Conditions
open emitter
open base
open collector
T
sp
90
C
I
C
= 5 mA; V
CE
= 2 V;
T
j
= 25
C
V
CB
= 2 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 2 V;
f = 2 GHz; T
amb
= 25
C
I
C
= 15 mA; V
CE
= 2 V;
f = 2.4 GHz; T
amb
= 25
C
I
C
= 3 mA; V
CE
= 2 V;
f = 2.4 GHz;
S
=
opt
I
C
= 30 mA; V
CE
= 2.5 V;
Z
S
= Z
L
= 50
;
f = 2.4 GHz; T
amb
= 25
C
[2]
[1]
Symbol Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
collector-base
capacitance
transition frequency
maximum power gain
noise figure
output power at 1 dB
gain compression
Min
-
-
-
-
-
90
-
-
-
-
-
Typ
-
-
-
3
-
135
47
21
24.5
0.85
11.5
Max
16
5.5
2.5
30
200
180
-
-
-
-
-
Unit
V
V
V
mA
mW
fF
GHz
dB
dB
dBm
[1]
[2]
T
sp
is the temperature at the solder point of the emitter lead.
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
1, 3
2
1
mbb159
Simplified outline
3
4
Graphic symbol
4
2
3. Ordering information
Table 3.
Ordering information
Package
Name
BFU630F
-
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
Type number
BFU630F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 15 December 2010
2 of 12
NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
4. Marking
Table 4.
BFU630F
Marking
Marking
D2*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
[1]
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
Conditions
open emitter
open base
open collector
T
sp
90
C
[1]
Min
-
-
-
-
-
65
-
Max
16
5.5
2.5
30
200
+150
150
Unit
V
V
V
mA
mW
C
C
T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
300
Unit
K/W
300
P
tot
(mW)
250
001aam812
200
150
100
50
0
0
40
80
120
T
sp
(°C)
160
Fig 1.
BFU630F
Power derating curve
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 15 December 2010
3 of 12
NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C unless otherwise specified
Symbol
Parameter
Conditions
I
C
= 2.5
A;
I
E
= 0 mA
I
C
= 1 mA; I
B
= 0 mA
I
E
= 0 mA; V
CB
= 8 V
I
C
= 5 mA; V
CE
= 2 V
V
CB
= 2 V; f = 1 MHz
V
EB
= 0.5 V; f = 1 MHz
V
CB
= 2 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 2 V; f = 2 GHz;
T
amb
= 25
C
I
C
= 15 mA; V
CE
= 2 V; T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
s
21
2
insertion power gain
I
C
= 15 mA; V
CE
= 2 V; T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
NF
noise figure
I
C
= 3 mA; V
CE
= 2 V;
S
=
opt
;
T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
G
ass
associated gain
I
C
= 3 mA; V
CE
= 2 V;
S
=
opt
;
T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
P
L(1dB)
output power at 1 dB gain compression
I
C
= 30 mA; V
CE
= 2.5 V;
Z
S
= Z
L
= 50
;
T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
-
-
-
-
12.5
12.5
11.5
12.5
-
-
-
-
dBm
dBm
dBm
dBm
-
-
-
-
22.5
21
19
13
-
-
-
-
dB
dB
dB
dB
-
-
-
-
0.75
0.80
0.85
1.30
-
-
-
-
dB
dB
dB
dB
-
-
-
-
22.5
21
19
12
-
-
-
-
dB
dB
dB
dB
[1]
Min Typ
16
5.5
-
-
90
-
-
-
-
-
-
3
-
135
264
332
47
21
Max Unit
-
-
30
100
180
-
-
-
-
fF
fF
fF
GHz
V
V
mA
nA
V
(BR)CBO
collector-base breakdown voltage
V
(BR)CEO
collector-emitter breakdown voltage
I
C
I
CBO
h
FE
C
CES
C
EBS
C
CBS
f
T
G
p(max)
collector current
collector-base cut-off current
DC current gain
collector-emitter capacitance
emitter-base capacitance
collector-base capacitance
transition frequency
maximum power gain
-
-
-
-
27
26
24.5
16
-
-
-
-
dB
dB
dB
dB
BFU630F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 15 December 2010
4 of 12
NXP Semiconductors
BFU630F
NPN wideband silicon RF transistor
Table 7.
Characteristics
…continued
T
j
= 25
C unless otherwise specified
Symbol
IP3
Parameter
third-order intercept point
Conditions
I
C
= 30 mA; V
CE
= 2.5 V;
Z
S
= Z
L
= 50
;
T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
[1]
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= MSG.
Min Typ
Max Unit
-
-
-
-
25.5
26
26.5
27.5
-
-
-
-
dBm
dBm
dBm
dBm
25
I
C
(mA)
20
001aam813
(1)
(2)
(3)
(4)
(5)
200
h
FE
150
001aam814
15
(6)
100
(7)
10
(8)
(9)
50
5
(10)
0
0
1
2
3
4
V
CE
(V)
5
0
0
10
20
I
C
(mA)
30
T
amb
= 25
C.
(1) I
B
= 200
A
(2) I
B
= 180
A
(3) I
B
= 160
A
(4) I
B
= 140
A
(5) I
B
= 120
A
(6) I
B
= 100
A
(7) I
B
= 80
A
(8) I
B
= 60
A
(9) I
B
= 40
A
(10) I
B
= 20
A
V
CE
= 2 V; T
amb
= 25
C.
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
Fig 3.
DC current gain as a function of collector
current; typical values
BFU630F
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 15 December 2010
5 of 12
京公网安备 11010802033920号
EEWORLD
