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BUZ908D

Description
P-CHANNEL POWER MOSFET
File Size26KB,2 Pages
ManufacturerETC1
Download Datasheet Compare View All

BUZ908D Overview

P-CHANNEL POWER MOSFET

MAGNA
TEC
25.0
+0.1
-0.15
BUZ907D
BUZ908D
MECHANICAL DATA
Dimensions in mm
P–CHANNEL
POWER MOSFET
8.7 Max.
1.50
Typ.
11.60
± 0.3
10.90 ± 0.1
POWER MOSFETS FOR
AUDIO APPLICATIONS
30.2 ± 0.15
Ø 20 M ax.
39.0 ± 1.1
16.9 ± 0.15
1
2
Ø 1.0
FEATURES
• HIGH SPEED SWITCHING
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (220V & 250V)
• HIGH ENERGY RATING
R 4.0 ± 0.1
R 4.4 ± 0.2
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODES
• COMPLIMENTARY N–CHANNEL
BUZ902D & BUZ903D
Case – Source
TO–3
Pin 1 – Gate
Pin 2 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSX
Drain – Source Voltage
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θJC
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
BUZ907D
-220V
±14V
-16A
-16A
250W
–55 to 150°C
150°C
0.5°C/W
BUZ908D
-250V
Magnatec.
Telephone (01455) 554711. Fax (01455) 552612.
Prelim. 01/97

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