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BY298

Description
2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size35KB,1 Pages
ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.
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BY298 Overview

2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
BY296 THRU BY299
FAST RECOVERY PLASTIC RECTIFIER
VOLTAGE:100-800V
CURRENT:2.0A
FEATURES
·Fast
switching
·Low
leakage
·Low
forward voltage drop
·High
current capability
·High
surge capability
·High
reliability
DO-15
1.0(25.4)
MIN.
.300(7.6)
.230(5.8)
.034(0.9)
.028(0.7)
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
0.38 grams
.140(3.6)
.104(2.6)
1.0(25.4)
MIN.
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
BY296
100
70
100
BY297
200
140
200
2.0
70
1.3
5.0
BY298
400
280
400
BY299
800
560
800
units
V
V
V
A
A
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
at T
A
=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Instantaneous forward Voltage at 2.0A
DC
Maximum DC Reverse Current at Rated DC
Blocking Voltage T
A
=25°C
Maximum Full Load Reverse Current Full Cycle
Average,.375”(9.5mm) lead length at T
L
=55°C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Notes:
V
RRM
V
RMS
V
DC
I
o
I
FSM
V
F
I
R
100
t
rr
C
J
150
40
500
µA
nS
pF
1.Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0 volts
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BY298 BY296 BY297 BY299
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