BZX384-V-Series
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon Planar Power Zener Diodes
• The Zener voltages are graded according
e3
to the international E 24 standard
• Standard Zener voltage tolerance is ± 5 %;
Replace "C" with "B" for ± 2 % tolerance
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
20145
Mechanical Data
Case:
SOD323 Plastic case
Weight:
approx. 5.0 mg
Packaging Codes/Options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
1)
Test condition
Symbol
P
tot
Value
200
1)
Unit
mW
Device on fiberglass substrate
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
stg
Value
650
1)
150
- 65 to + 150
Unit
K/W
°C
°C
Valid that electrodes are kept at ambient temperature
Document Number 85764
Rev. 1.6, 17-May-06
www.vishay.com
1
BZX384-V-Series
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
mA
10
3
10
2
1000
5
4
3
2
T
J
= 25 °C
I
F
10
1
10
-1
10
-2
10
-3
10
-4
10
-5
T
J
= 100 °C
r
zj
100
T
J
= 25 °C
5
4
3
2
100
5
4
3
2
2.7
3.6
4.7
5.1
5.6
0
18114
0.2
0.4
0.6
0.8
1V
1
0.1
18117
2
5
1
2
5
10
I
Z
2
5
100 mA
V
F
Figure 1. Forward characteristics
Figure 4. Dynamic Resistance vs. Zener Current
mW
250
pF
1000
7
5
4
3
2
T
j
= 25 °C
200
C
tot
V
R
= 1
V
V
R
= 2
V
P
tot
150
100
100
7
5
4
V
R
= 1
V
V
R
= 2
V
50
3
2
0
0
18192
10
100
200 °C
1
18193
2
3
4 5
10
2
3 4 5
100
V
T
amb
V
Z
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Capacitance vs. Zener Voltage
°C/W
10
3
7
5
4
3
2
Ω
100
T
J
= 25 °C
0.5
0.2
0.1
0.05
0.02
0.01
=0
5
4
r
thA
10
2
7
5
4
3
2
r
zj
3
2
33
27
22
18
15
12
10
6.8/8.2
6.2
10
5
4
10
7
5
4
3
2
tp
3
tp
T
T
P
I
2
1
10
-5
18116
1
-1
10
-4
10
-3
10
-2
10
1
10s
0.1
18119
2
5
1
2
5
tp
10
I
Z
2
5
100 mA
Figure 3. Pulse Thermal Resistance vs. Pulse Duration
Figure 6. Dynamic Resistance vs. Zener Current
www.vishay.com
4
Document Number 85764
Rev. 1.6, 17-May-06
BZX384-V-Series
Vishay Semiconductors
Ω
10
3
7
5
4
T
j
= 25 °C
mV/°C
25
r
zj
3
2
47 + 51
43
39
36
Δ
V
Z
Δ
T
j
20
15
10
5
0
-5
I
Z
=
5 mA
1 mA
20 mA
10
2
7
5
4
3
2
10
0.1
18120
2
3
4 5
1
2
3 4 5
10 mA
1
18135
2
3
4 5
10
2
3 4 5
100
V
I
Z
Figure 7. Dynamic Resistance vs. Zener Current
V
Z
at I
Z
= 5 mA
V
≥
27
V,
I = 2 mA
Figure 10. Temperature Dependence of Zener Voltage vs. Zener
Voltage
V
0.8
Ω
10
3
5
4
3
2
r
zth
= R
thA
x
V
Z
x
Δ
V
Z
Δ
T
j
Δ
V
Z
25
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V
Z
at I
Z
= 5 mA
15
10
r
zth
10
2
5
4
3
2
8
7
6.2
5.9
5.6
5.1
3.6
4.7
10
5
4
3
2
negative
positive
-1
- 0.2
2
3 4 5
1
1
18121
2
3
4 5
10
100
V
0
18124
20
40
60
80
100 120 140 C
V
Z
at I
Z
= 5 mA
T
j
Figure 8. Thermal Differential Resistance vs. Zener Voltage
Figure 11. Change of Zener Voltage vs. Junction Temperature
Ω
100
7
5
4
V
9
8
7
V
Z
at I
Z
= 2 mA
51
r
zj
3
2
Δ
V
Z
6
5
10
7
5
4
3
2
4
3
2
1
T
j
= 25 °C
I
Z
= 5 mA
43
36
0
-1
1
1
18122
2
3
4 5
I
Z
= 2 mA
0
20
40
60
80
100 120
140 °C
10
2
3 4 5
100
V
V
Z
18194
T
j
Figure 9. Dynamic Resistance vs. Zener Voltage
Figure 12. Change of Zener Voltage vs. Junction Temperature
Document Number 85764
Rev. 1.6, 17-May-06
www.vishay.com
5
Embedded System
京公网安备 11010802033920号
EEWORLD
