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LP1030D

Description
Variable Capacitance Diode, Ultra High Frequency, 18pF C(T), 25V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size121KB,2 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

LP1030D Overview

Variable Capacitance Diode, Ultra High Frequency, 18pF C(T), 25V, Silicon, Abrupt

LP1030D Parametric

Parameter NameAttribute value
package instructionO-CEMW-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW INDUCTANCE
Minimum breakdown voltage25 V
ConfigurationSINGLE
Minimum diode capacitance ratio4.6
Nominal diode capacitance18 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandULTRA HIGH FREQUENCY
JESD-30 codeO-CEMW-N2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Maximum power dissipation5 W
Certification statusNot Qualified
minimum quality factor600
Maximum repetitive peak reverse voltage25 V
Maximum reverse current2e-8 µA
Reverse test voltage20 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Varactor Diode ClassificationABRUPT

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Index Files: 2115  1475  1953  2599  2577  43  30  40  53  52 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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