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S1310EGBJ-32.0000

Description
VCXO, Clock, 32MHz Min, 125MHz Max, 32MHz Nom,
CategoryPassive components    oscillator   
File Size3MB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Download Datasheet Parametric View All

S1310EGBJ-32.0000 Overview

VCXO, Clock, 32MHz Min, 125MHz Max, 32MHz Nom,

S1310EGBJ-32.0000 Parametric

Parameter NameAttribute value
MakerDiodes
Reach Compliance Codecompli
ECCN codeEAR99
Installation featuresSURFACE MOUNT
Number of terminals4
Maximum operating frequency125 MHz
Minimum operating frequency32 MHz
Nominal operating frequency32 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialMETAL
Encapsulate equivalent codeGWDIP4/14,.5
power supply3.3 V
Certification statusNot Qualified
Maximum slew rate35 mA
Nominal supply voltage3.3 V
surface mountYES
technologyHYBRID
Base Number Matches1
SaRonix
Voltage Controlled Crystal Oscillator
Technical Data
Frequency Range:
Frequency Stability:
3.3 & 5V, LVCMOS/LVTTL
Sx1310 / Sx1319 / Sx1510 / Sx1519 Series
32 MHz to 125 MHz
±25 or ±50 ppm over all conditions: operating temperature,
voltage change, load change, calibration tolerance, with V
C
= 2.5V @ 5V, VC = 1.65V @ 3.3V
@ 40°C: ±10 ppm max for 5 years or ±12 ppm max for 10 years
Aging:
Temperature Range:
Operating:
Storage:
Supply Voltage:
Recommended Operating:
ACTUAL SIZE
0 to +70°C or -40 to +85°C
-55 to +125°C
5 V ±5% or 3.3V ±10%
Description
A voltage controlled crystal oscillator
with a wide range of performance op-
tions to 125 MHz. The devices are pack-
aged in either standard 14-pin or 8-pin
DIP compatible all metal, resistance
welded packages for commercial or in-
dustrial temperature range applications.
True SMD DIL14 versions for IR reflow
are available, select option "S" in part
number builder. See separate data sheet
for SMD package dimensions.
Applications & Features
Phase-locked loops encountered in
Telecom, LAN and Wireless data, and
in video processing applications
LVCMOS, LVTTL compatible
˜
Tri-state option available
Output Waveform
CMOS
T
r
1 Level
80%V
DD
50%V
DD
20%V
DD
0 Level
GND
SYMMETRY
T
f
V
DD
Supply Current:
32 to 70 MHz:
70+ to 125 MHz:
Output Drive:
Symmetry:
50mA max, 35mA max @ 3.3V
65mA max, 35mA max @ 3.3V
Rise & Fall Times:
Logic 0:
Logic 1:
Load:
Jitter:
Pull Characteristics:
Input Impedance:
Frequency Response (-3dB):
Pullability:
Control Voltage:
Transfer Function:
Linearity:
Center Control Voltage:
Phase noise:
3.3V: 45/55% max @ 50% V
DD
for 0 to 70°C,
3.3V: 40/60% max @ 50% V
DD
for -40 to +85°C
5.0V: 45/55% max @ 50% V
DD or
40/60% max @ 1.4V TTL level
4ns max: 20% to 80% V
DD
1.5ns max: 0.5V to 2.5V @ 5V TTL only
0.5V max @ 5V or 20% V
DD
max @ 3.3V
2.5V min @ 5V or 80% V
DD
min @ 3.3V
5V: 5TTL or 50pF, 32 to 50 MHz
5V: 5TTL or 30pF 50+ to 125 MHz
3.3V: 30pF up to 80 MHz, 95Ω AC up to 125 MHz
20ps max RMS period jitter
50KΩ min
50 kHz min
±25, ±50, ±75, ±100 ppm APR*
0.5 to 4.5 V @ 5V or 0.3 to 3.0V @ 3.3V
Frequency increases when Control Voltage increases
5% or 10% max
2.5V @ 5V, 1.65V @ 3.3V
-95 dbc typ / Hz @ 100Hz
-110 dbc typ / Hz @ 1kHz
-100 dbc typ / Hz @ 10kHz
Mechanical:
Shock:
Solderability:
Terminal Strength:
Vibration:
Solvent Resistance:
Resistance to Soldering Heat:
MIL-STD-883, Method 2002, Condition B
MIL-STD-883, Method 2003
MIL-STD-202, Method 211, Conditions B2
MIL-STD-883, Method 2007, Condition A
MIL-STD-202, Method 215
MIL-STD-202, Method 210, Condition A, B or C
( I or J for Gull Wing )
Environmental:
Gross Leak Test:
Fine Leak Test:
Thermal Shock:
Moisture Resistance:
MIL-STD-883,
MIL-STD-883,
MIL-STD-883,
MIL-STD-883,
Method
Method
Method
Method
1014, Condition C
1014, Condition A2
1011, Condition A
1004
*
APR = (VCXO Pull relative to specified Output Frequency)
(VCXO Frequency Stability)
NOTE: APR is inclusive of Aging
DS-162
REV E
SaRonix
www.pericom.com/saronix

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