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UNR421X

Description
Composite Device - Transistors with built-in Resistor
File Size272KB,14 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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UNR421X Overview

Composite Device - Transistors with built-in Resistor

Transistors with built-in Resistor
UNR421x Series
(UN421x Series)
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
New S type package, allowing supply with the radial taping
0.75 max.
4.0
±0.2
2.0
±0.2
(0.8)
3.0
±0.2
Resistance by Part Number
UNR4210
UNR4211
UNR4212
UNR4213
UNR4214
UNR4215
UNR4216
UNR4217
UNR4218
UNR4219
UNR421D
UNR421E
UNR421F
UNR421K
UNR421L
(UN4210)
(UN4211)
(UN4212)
(UN4213)
(UN4214)
(UN4215)
(UN4216)
(UN4217)
(UN4218)
(UN4219)
(UN421D)
(UN421E)
(UN421F)
(UN421K)
(UN421L)
(R
1
)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
10 kΩ
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
0.45
+0.20
–0.10
(2.5) (2.5)
0.45
+0.20
–0.10
0.7
±0.1
15.6
±0.5
(0.8)
7.6
2
3
1
1: Emitter
2: Collector
3: Base
NS-B1 Package
Internal Connection
R
1
B
R
2
E
C
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
300
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
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