FM24C04B datasheet, PDF - EEWORLD Datasheet

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FM24C04B: DescriptionSPECIALTY MEMORY CIRCUIT, PDSO8; Categorystorage; File Size284KB，12 Pages; ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation); Websitehttp://www.cypress.com/

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FM24C04B Overview

SPECIALTY MEMORY CIRCUIT, PDSO8

FM24C04B Parametric

Parameter Name	Attribute value
Number of functions	1
Number of terminals	8
Maximum operating temperature	85 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	5.5 V
Minimum supply/operating voltage	4.5 V
Rated supply voltage	5 V
Processing package description	Green, MS-012AA, SOIC-8
state	TRANSFERRED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal spacing	1.27 mm
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Temperature level	INDUSTRIAL
memory width	8
organize	512 × 8
storage density	4096 deg
operating mode	Synchronize
Number of digits	512 words
Number of digits	512
Memory IC type	memory circuit

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Preliminary

FM24C04B

4Kb Serial 5V F-RAM Memory

Features

4K bit Ferroelectric Nonvolatile RAM

•

Organized as 512 x 8 bits

•

High Endurance 10

Read/Writes

•

38 Year Data Retention

•

NoDelay™ Writes

•

Advanced High-Reliability Ferroelectric Process

Fast Two-wire Serial Interface

•

Up to 1 MHz maximum bus frequency

•

Direct hardware replacement for EEPROM

•

Supports legacy timing for 100 kHz & 400 kHz

Low Power Operation

•

5V operation

•

100

µA

Active Current (100 kHz)

•

µA

(typ.) Standby Current

Industry Standard Configuration

•

Industrial Temperature -40° C to +85° C

•

8-pin “Green”/RoHS SOIC (-G)

Description

The FM24C04B is a 4-kilobit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or FRAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 38 years

while eliminating the complexities, overhead, and

system level reliability problems caused by EEPROM

and other nonvolatile memories.

The FM24C04B performs write operations at bus

speed. No write delays are incurred. Data is written to

the memory array in the cycle after it has been

successfully transferred to the device. The next bus

cycle may commence immediately without the need

for data polling. The FM24C04B is capable of

supporting 10

read/write cycles, or a million times

more write cycles than EEPROM.

These capabilities make the FM24C04B ideal for

nonvolatile memory applications requiring frequent

or rapid writes. Examples range from data collection

where the number of write cycles may be critical, to

demanding industrial controls where the long write

time of EEPROM can cause data loss. The

combination of features allows more frequent data

writing with less overhead for the system.

The FM24C04B provides substantial benefits to users

of serial EEPROM, yet these benefits are available in

a hardware drop-in replacement. The FM24C04B is

available in an industry standard 8-pin SOIC package

and uses a familiar two-wire protocol. The

specifications are guaranteed over the industrial

temperature range from -40°C to +85°C.

Pin Configuration

VSS

VDD

SCL

SDA

Pin Names

A1-A2

SDA

SCL

VSS

VDD

Function

Device Select Address 1 and 2

Serial Data/Address

Serial Clock

Write Protect

Ground

Supply Voltage

Ordering Information

FM24C04B-G

FM24C04B-GTR

“Green”/RoHS 8-pin SOIC

“Green”/RoHS 8-pin SOIC,

Tape & Reel

This is a product that has fixed target specifications but are subject

to change pending characterization results.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

Rev. 1.3

Feb. 2011

www.ramtron.com

Page 1 of 12

FM24C04B Related Products

	FM24C04B	FM24C04B-G	FM24C04B-GTR
Description	SPECIALTY MEMORY CIRCUIT, PDSO8	SPECIALTY MEMORY CIRCUIT, PDSO8	SPECIALTY MEMORY CIRCUIT, PDSO8
Number of functions	1	1	1
Number of terminals	8	8	8
Maximum operating temperature	85 Cel	85 °C	85 °C
Minimum operating temperature	-40 Cel	-40 °C	-40 °C
surface mount	Yes	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	pair	DUAL	DUAL
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
memory width	8	8	8
organize	512 × 8	512X8	512X8
Maker	-	Ramtron International Corporation (Cypress Semiconductor Corporation)	Ramtron International Corporation (Cypress Semiconductor Corporation)
Parts packaging code	-	SOIC	SOIC
package instruction	-	SOP,	SOP,
Contacts	-	8	8
Reach Compliance Code	-	unknow	unknow
JESD-30 code	-	R-PDSO-G8	R-PDSO-G8
length	-	4.9 mm	4.9 mm
memory density	-	4096 bi	4096 bi
Memory IC Type	-	MEMORY CIRCUIT	MEMORY CIRCUIT
word count	-	512 words	512 words
character code	-	512	512
Operating mode	-	SYNCHRONOUS	SYNCHRONOUS
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	-	SOP	SOP
Package shape	-	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE
Certification status	-	Not Qualified	Not Qualified
Maximum seat height	-	1.75 mm	1.75 mm
Maximum supply voltage (Vsup)	-	5.5 V	5.5 V
Minimum supply voltage (Vsup)	-	4.5 V	4.5 V
Nominal supply voltage (Vsup)	-	5 V	5 V
technology	-	CMOS	CMOS
Terminal pitch	-	1.27 mm	1.27 mm
width	-	3.9 mm	3.9 mm

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