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FM24C04B-GTR

Description
SPECIALTY MEMORY CIRCUIT, PDSO8
Categorystorage    storage   
File Size284KB,12 Pages
ManufacturerRamtron International Corporation (Cypress Semiconductor Corporation)
Websitehttp://www.cypress.com/
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FM24C04B-GTR Overview

SPECIALTY MEMORY CIRCUIT, PDSO8

FM24C04B-GTR Parametric

Parameter NameAttribute value
MakerRamtron International Corporation (Cypress Semiconductor Corporation)
Parts packaging codeSOIC
package instructionSOP,
Contacts8
Reach Compliance Codeunknow
JESD-30 codeR-PDSO-G8
length4.9 mm
memory density4096 bi
Memory IC TypeMEMORY CIRCUIT
memory width8
Number of functions1
Number of terminals8
word count512 words
character code512
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512X8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum seat height1.75 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width3.9 mm
Preliminary
FM24C04B
4Kb Serial 5V F-RAM Memory
Features
4K bit Ferroelectric Nonvolatile RAM
Organized as 512 x 8 bits
High Endurance 10
12
Read/Writes
38 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
Up to 1 MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
Low Power Operation
5V operation
100
µA
Active Current (100 kHz)
4
µA
(typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40° C to +85° C
8-pin “Green”/RoHS SOIC (-G)
Description
The FM24C04B is a 4-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system level reliability problems caused by EEPROM
and other nonvolatile memories.
The FM24C04B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array in the cycle after it has been
successfully transferred to the device. The next bus
cycle may commence immediately without the need
for data polling. The FM24C04B is capable of
supporting 10
12
read/write cycles, or a million times
more write cycles than EEPROM.
These capabilities make the FM24C04B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss. The
combination of features allows more frequent data
writing with less overhead for the system.
The FM24C04B provides substantial benefits to users
of serial EEPROM, yet these benefits are available in
a hardware drop-in replacement. The FM24C04B is
available in an industry standard 8-pin SOIC package
and uses a familiar two-wire protocol. The
specifications are guaranteed over the industrial
temperature range from -40°C to +85°C.
Pin Configuration
NC
A1
A2
VSS
1
2
3
4
8
7
6
5
VDD
WP
SCL
SDA
Pin Names
A1-A2
SDA
SCL
WP
VSS
VDD
Function
Device Select Address 1 and 2
Serial Data/Address
Serial Clock
Write Protect
Ground
Supply Voltage
Ordering Information
FM24C04B-G
FM24C04B-GTR
“Green”/RoHS 8-pin SOIC
“Green”/RoHS 8-pin SOIC,
Tape & Reel
This is a product that has fixed target specifications but are subject
to change pending characterization results.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
Rev. 1.3
Feb. 2011
www.ramtron.com
Page 1 of 12

FM24C04B-GTR Related Products

FM24C04B-GTR FM24C04B FM24C04B-G
Description SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8 SPECIALTY MEMORY CIRCUIT, PDSO8
memory width 8 8 8
Number of functions 1 1 1
Number of terminals 8 8 8
Maximum operating temperature 85 °C 85 Cel 85 °C
Minimum operating temperature -40 °C -40 Cel -40 °C
organize 512X8 512 × 8 512X8
surface mount YES Yes YES
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL pair DUAL
Maker Ramtron International Corporation (Cypress Semiconductor Corporation) - Ramtron International Corporation (Cypress Semiconductor Corporation)
Parts packaging code SOIC - SOIC
package instruction SOP, - SOP,
Contacts 8 - 8
Reach Compliance Code unknow - unknow
JESD-30 code R-PDSO-G8 - R-PDSO-G8
length 4.9 mm - 4.9 mm
memory density 4096 bi - 4096 bi
Memory IC Type MEMORY CIRCUIT - MEMORY CIRCUIT
word count 512 words - 512 words
character code 512 - 512
Operating mode SYNCHRONOUS - SYNCHRONOUS
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
encapsulated code SOP - SOP
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Certification status Not Qualified - Not Qualified
Maximum seat height 1.75 mm - 1.75 mm
Maximum supply voltage (Vsup) 5.5 V - 5.5 V
Minimum supply voltage (Vsup) 4.5 V - 4.5 V
Nominal supply voltage (Vsup) 5 V - 5 V
technology CMOS - CMOS
Terminal pitch 1.27 mm - 1.27 mm
width 3.9 mm - 3.9 mm
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