IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
D
FEATURES
500
0.125
230
65
110
Single
V
GS
= 10 V
• Super Fast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simpler Drive
Requirements
Available
RoHS*
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Lead (Pb)-free Available
SUPER-247
TM
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
S
G
D
G
S
N-Channel
MOSFET
• Uninterruptible Power Supplies
• Motor Control Applications
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
SUPER-247
TM
IRFPS35N50LPbF
SiHFPS35N50L-E3
IRFPS35N50L
SiHFPS35N50L
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche
Current
a
T
C
= 25 °C
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 30
34
22
140
3.6
560
34
45
450
15
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 0.97 mH, R
G
= 25
Ω,
I
AS
= 34 A (see fig. 12).
c. I
SD
≤
34 A, dI/dt
≤
765 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91257
S-81368-Rev. A, 21-Jul-08
www.vishay.com
1
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
Note
a. R
th
is measured at T
J
approximately 90 °C.
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.24
-
MAX.
40
-
0.28
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance (Energy
Related)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
500
-
3.0
-
-
-
-
18
-
-
-
-
-
-
TYP.
-
0.12
-
-
-
-
0.125
-
5580
590
58
7290
160
320
220
-
-
-
1.1
24
100
42
42
MAX.
-
-
5.0
± 100
50
2.0
0.145
-
-
-
-
-
-
-
-
230
65
110
-
-
-
-
-
UNIT
V
V/°C
V
nA
µA
mA
Ω
S
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
C
oss eff. (ER)
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 30 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 20
A
b
V
DS
= 50 V, I
D
= 20 A
b
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V , f = 1.0 MHz
V
DS
= 400 V , f = 1.0 MHz
V
GS
= 0 V
V
DS
= 0 V to 400
V
c
pF
-
-
V
GS
= 10 V
I
D
= 34 A, V
DS
= 400 V,
see fig. 7 and 13
b
-
-
-
-
-
-
-
nC
Ω
f = 1 MHz, open drain
V
DD
= 250 V, I
D
= 34 A,
R
G
= 1.2
Ω,
see fig. 10
b
ns
-
-
-
-
-
-
-
-
-
-
-
170
220
670
1500
8.5
34
A
140
1.5
250
330
1010
2200
-
V
ns
µC
A
G
S
T
J
= 25 °C, I
S
= 34 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 34 A
T
J
= 125 °C, dI/dt = 100
A/µs
b
T
J
= 25 °C, I
S
= 34 A, V
GS
= 0 V
b
T
J
= 125 °C, dI/dt = 100 A/µs
b
T
J
= 25 °C
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
400 µs; duty cycle
≤
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80 % V
DS
.
C
oss
eff. (ER) is a fixed capacitance that stores the same energy as C
oss
while V
DS
is rising from 0 to 80 % V
DS
.
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Document Number: 91257
S-81368-Rev. A, 21-Jul-08
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
ID, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
100
10
T
J
= 150
°
C
10
1
0.1
1
4.5V
0.01
0.1
T
J
= 25
°
C
V
DS = 50V
20µs PULSE
WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
0.001
0.1
1
20µs PULSE
WIDTH
Tj = 25°C
10
100
0.01
4.0
V
DS, Drain-to-Source
Voltage
(V)
Fig. 1 - Typical Output Characteristics
V
GS
, Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
1000
TOP
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
3.0
I
D
= 34A
2.5
2.0
10
1.5
1.0
1
4.5V
0.5
0.1
0.1
20µs PULSE
WIDTH
T
J
= 150
°
C
1
10
100
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80
100 120 140 160
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature (
°
C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91257
S-81368-Rev. A, 21-Jul-08
www.vishay.com
3
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
100000
V
GS
, Gate-to-Source
Voltage
(V)
V
GS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
20
I
D
= 34A
V
DS
= 400V
V
DS
= 250V
V
DS
= 100V
10000
16
C, Capacitance(pF)
Ciss
12
1000
Coss
100
8
Crss
4
10
1
10
100
1000
0
0
40
80
120
FOR TEST CIRCUIT
SEE FIGURE 13
160
200
240
V
DS, Drain-to-Source
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Q
G
, Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
30
25
1000
20
I
SD
, Reverse Drain Current (A)
100
Energy (µJ)
T
J
= 150
°
C
10
15
10
5
1
T
J
= 25
°
C
0
0
100
200
300
400
500
600
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
= 0
V
1.4
1.6
V
DS, Drain-to-Source
Voltage
(V)
V
SD
,Source-to-Drain
Voltage
(V)
Fig. 8 - Typical Source Drain Diode Forward Voltage
Fig. 6 - Typical Output Capacitance Stored Energy
vs. V
DS
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Document Number: 91257
S-81368-Rev. A, 21-Jul-08
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
R
D
V
DS
35
R
G
V
GS
D.U.T.
+
-
V
DD
30
I
D
, Drain Current (A)
10
V
25
20
15
V
DS
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
Fig. 10a - Switching Time Test Circuit
10
5
0
25
50
75
100
125
150
90
%
T
C
, Case Temperature ( ° C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
15
V
t
p
V
DS
L
Driver
R
G
20
V
t
p
D.U.T
I
AS
0.01
Ω
+
A
-
V
DD
A
A
I
AS
Fig. 12b - Unclamped Inductive Waveforms
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5
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91257
S-81368-Rev. A, 21-Jul-08
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