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KSD471A-G

Description
NPN Silicon Transistors
File Size280KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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KSD471A-G Overview

NPN Silicon Transistors

MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
KSD471A-O
KSD471A-Y
KSD471A-G
Features


Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Collector Dissipation : I
C
= 1A
Collector Current : P
C
= 800mW
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
NPN
Silicon
Transistors
TO-92
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J
T
STG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction Temperature
Storage Temperature
Rating
30
40
5.0
1
800
150
-55 to +150
Unit
V
V
V
A
mW
O
O
A
E
B
C
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector-Base Cutoff Current
(V
CB
=30Vdc,I
E
=0)
Min
40
30
5.0
---
Typ
---
---
---
---
Max
---
---
---
0.1
Units
Vdc
Vdc
Vdc
uAdc
C
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
D
ON CHARACTERISTICS
h
FE
V
CE(sat)
f
T
C
ob
Forward Current Transfer ratio*
(I
C
=0.1Adc, V
CE
=1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=1Adc, I
B
=0.1Adc)
Transition Frequency
(V
CE
=6Vdc, I
C
=10mAdc)
Collector Output Capacitance
(V
CB
=6Vdc, I
E
=0, f=1.0MHz)
70
---
---
---
---
---
130
16
400
0.5
---
---
---
Vdc
E
G
B
C
DIMENSIONS
MHz
pF
DIM
A
B
C
D
E
G
INCHES
MIN
.170
.170
.550
.010
.130
.096
MM
MAX
.190
.190
.590
.020
.160
.104
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
CLASSIFICATION OF H
FE
Rank
Range
O
70-140
Y
120-240
G
200-400
www.mccsemi.com
Revision:
A
1 of 3
2011/01/01

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