SEMICONDUCTOR
TECHNICAL DATA
FEATURE
Low Collector-Emitter Saturation Voltage V
CE(sat)
.
High Collector Current Capability : I
C
and I
CP
.
Higher Efficiency Leading to Less Heat Generation.
L
KTA1571S
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
L
A
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation**
Junction Temperature
Storage Temperature Range
DC
Pulse *
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
RATING
-120
-100
-5
-1
-3
-300
350
150
-55 150
0.6mm.
UNIT
V
V
V
2
3
1
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
C
N
H
mA
mW
1. EMITTER
2. BASE
3. COLLECTOR
* Pulse Width = 300 S, Duty Cycle 2%.
** Package Mounted on 99.5% Alumina 10 8
K
A
M
SOT-23
MARKING
Lot No.
Type Name
KMA
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
(1)
V
CE(sat)
(2)
V
CE(sat)
(3)
V
BE(sat)
V
BE
h
FE
(1)
h
FE
(2)
h
FE
(3)
h
FE
(4)
f
T
C
ob
TEST CONDITION
I
C
=-100 A
I
C
=-1mA
I
E
=-100 A
V
CB
=-80V, I
E
=0A
V
EB
=-4V, I
C
=0A
V
CES
=-80V, V
BE
=0V
I
C
=-250mA, I
B
=-25mA
I
C
=-500mA, I
B
=-50mA
I
C
=-1A, I
B
=-100mA
I
C
=-1A, I
B
=-100mA
V
CE
=-5V, I
C
=-1A
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-250mA
V
CE
=-5V, I
C
=-500mA
V
CE
=-5V, I
C
=-1A
V
CE
=-10V, I
C
=-50mA, f=100MHz
V
CB
=-10V, f=1MHz
MIN.
-120
-100
-5
-
-
-
-
-
-
-
-
150
150
150
125
100
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
17
MAX.
-
-
-
-100
-100
-100
-0.12
-0.18
-0.32
-1.1
-1.0
-
-
450
-
-
-
MHz
pF
V
V
V
UNIT
V
V
V
nA
nA
nA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage **
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation Voltage **
Base-Emitter Saturation Voltage **
Base-Emitter Voltag
DC Current Gain **
Transition Frequency
Collector Output Capacitance
** Pulse Width = 300 S, Duty Cycle 2%.
2010. 2. 24
Revision No :3
J
D
1/3
KTA1571S
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
-1
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
I
C
/I
B
=10
V
CE(sat)
- I
C
-1
Ta=25 C
-10
-1
Ta=100 C
-10
-1
I
C
/I
B
=50
I
C
/I
B
=20
Ta=25 C
Ta=-55 C
-10
-2
-10
-1
-1
-10
-10
2
-10
3
-10
4
-10
-2
-10
-1
-1
-10
-10
2
-10
3
-10
4
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
V
BE(sat)
- I
C
-10
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
I
C
/I
B
=10
h
FE
- I
C
600
DC CURRENT GAIN h
FE
V
CE
=-10V
Ta=100 C
400
Ta=25 C
-1
Ta=-55 C
Ta=25 C
Ta=100 C
200
Ta=-55 C
-10
-1
-10
-1
-1
-10
-10
2
-10
3
-10
4
0
-10
-1
-1
-10
-10
2
-10
3
-10
4
COLLECTOR CURRENT I
C
(mA)
COLLECTOR CURRENT I
C
(mA)
V
BE(sat)
- I
C
-10
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
I
C
/I
B
=20
Ta=25 C
I
C
- V
CE
-2
COLLECTOR CURRENT I
C
(A)
-1.6
-1.2
-0.8
-0.4
0
I
B
=18mA
I
B
=22.5mA
Ta=25 C
I
B
=40.5mA
I
B
=45mA
I
B
=36mA
I
B
=31.5mA
I
B
=27mA
I
B
=9mA
I
B
=13.5mA
I
B
=4.5mA
-1
-10
-1
-10
-1
-1
-10
-10
2
-10
3
-10
4
0
-1
-2
-3
-4
-5
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2010. 2. 24
Revision No : 3
2/3
KTA1571S
SAFE OPERATING AREA
COLLECTOR CURRENT I
C
(mA)
-10000
I
C
MAX(PULSE)*
-1000
100mS
10mS*
1mS*
I
C
MAX(CONTINUOUS)
-100
DC OPERATION(Ta=25 C)
-10
*SINGLE NONREPETTTTVE PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN TEMPERATURE
-1
-0.1
-1
-10
-100
-1000
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
2010. 2. 24
Revision No : 3
3/3
PCB Design
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