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LD1106S

Description
High Performance N-Channel POWERJFET with Schottky Diode
File Size499KB,5 Pages
ManufacturerETC1
Download Datasheet View All

LD1106S Overview

High Performance N-Channel POWERJFET with Schottky Diode

PWRLITE LD1106S
High Performance N-Channel
P
OWERJFET
TM
with Schottky Diode
Features
Trench Power JFET with low threshold voltage Vth.
Device fully “ON” with Vgs = 0.7V
Optimum for “Low Side” Buck Converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
No “Body Diode”; extremely low Cds
Added Fast Recovery Schottky Diode in same package
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. The transistor “No Body
Diode” provides a very low associated parasitic capacitance Cds.
A Schottky Diode is added for applications where a freewheeling
diode is required. Ringing is also reduced so that a lower voltage
device may be a better solution.
Applications
DC-DC Converters for DDR and Graphic designs
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
Brick Modules
VRM Modules
DPAK Pin Assignments
D
G
D
G
S
S
N – Channel Power JFET
with Schottky Diode
Pin Definitions
Pin Number
1
2
3
Pin Name
Gate
Drain
Source
Pin Function Description
Gate.
Transistor Gate
Drain.
Transistor Drain
Source.
Transistor Source
V
DS
(V)
15V
Product Summary
Rdson (Ω)
0.009
I
D
(A)
30
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain-to-Source Avalanche Energy at 25°C
(V
DD
= 5V
DC
, IL=30A
PK
, L=0.3mH, R
G
=100
Ω)
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 seconds
Power Dissipation (Derated at 25°C on large heat sink)
Symbol
V
DS
V
GS
V
GD
I
D
I
D
E
AS
T
J
T
STG
T
P
D
Ratings
15
-10
-18
30
60
120
-55 to 150°C
-65 to 150°C
260°C
60
Units
V
V
V
A
A
mJ
°C
°C
°C
W
LD1106S.Rev 0.92 – AD 12-04
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void main(void) {P2=0X0F;EA=1;IT1=1;ET0=1; TMOD=0X01; TH0=-5000/256; //timing 0.01 seconds TL0=-5000/256; TR0=1; FOR(;;); } //interrupt service routine for timer counter 0 void timer0(void) interupt 1...
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